JPS643048B2 - - Google Patents
Info
- Publication number
- JPS643048B2 JPS643048B2 JP56205015A JP20501581A JPS643048B2 JP S643048 B2 JPS643048 B2 JP S643048B2 JP 56205015 A JP56205015 A JP 56205015A JP 20501581 A JP20501581 A JP 20501581A JP S643048 B2 JPS643048 B2 JP S643048B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- region
- gate
- ions
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 claims description 57
- 238000010884 ion-beam technique Methods 0.000 claims description 25
- 238000005468 ion implantation Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 229910001338 liquidmetal Inorganic materials 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000005365 phosphate glass Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/961—Ion beam source and generation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56205015A JPS58106823A (ja) | 1981-12-18 | 1981-12-18 | イオン注入方法 |
| US06/448,048 US4481042A (en) | 1981-12-18 | 1982-12-08 | Ion implantation method |
| EP82306568A EP0082640B1 (en) | 1981-12-18 | 1982-12-09 | Ion implantation method |
| DE8282306568T DE3277479D1 (en) | 1981-12-18 | 1982-12-09 | Ion implantation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56205015A JPS58106823A (ja) | 1981-12-18 | 1981-12-18 | イオン注入方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58106823A JPS58106823A (ja) | 1983-06-25 |
| JPS643048B2 true JPS643048B2 (cg-RX-API-DMAC7.html) | 1989-01-19 |
Family
ID=16500029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56205015A Granted JPS58106823A (ja) | 1981-12-18 | 1981-12-18 | イオン注入方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4481042A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0082640B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS58106823A (cg-RX-API-DMAC7.html) |
| DE (1) | DE3277479D1 (cg-RX-API-DMAC7.html) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143630A (ja) * | 1983-12-29 | 1985-07-29 | Fujitsu Ltd | イオン注入方法 |
| JPS61140175A (ja) * | 1984-12-13 | 1986-06-27 | Semiconductor Energy Lab Co Ltd | 被膜作製方法 |
| US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
| JPS60243960A (ja) * | 1984-05-18 | 1985-12-03 | Hitachi Ltd | イオンマイクロビ−ム装置 |
| JP2597976B2 (ja) * | 1985-03-27 | 1997-04-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JPS61237421A (ja) * | 1985-04-15 | 1986-10-22 | Hitachi Ltd | 半導体装置の製造方法 |
| FR2592224B1 (fr) * | 1985-12-20 | 1988-10-07 | Thomson Csf | Transistor a effet de champ, et circuit integre logique comportant un tel transistor |
| FR2592225B1 (fr) * | 1985-12-20 | 1988-02-05 | Thomson Csf | Transistor hyperfrequence de puissance |
| US4746964A (en) * | 1986-08-28 | 1988-05-24 | Fairchild Semiconductor Corporation | Modification of properties of p-type dopants with other p-type dopants |
| US5256579A (en) * | 1989-04-03 | 1993-10-26 | Massachusetts Institute Of Technology | Tunable-frequency Gunn diodes fabrication with focused ion beams |
| DE4339190B4 (de) * | 1992-11-16 | 2006-04-13 | Denso Corp., Kariya | Halbleiter-Beschleunigungsmesser |
| JP2000040691A (ja) * | 1998-07-21 | 2000-02-08 | Oki Electric Ind Co Ltd | 半導体装置製造方法 |
| KR100546334B1 (ko) * | 2003-07-01 | 2006-01-26 | 삼성전자주식회사 | 반도체 웨이퍼의 각 영역별로 불순물 농도가 다른 집적회로 반도체 소자 및 그 제조방법 |
| US7425353B2 (en) * | 2004-01-29 | 2008-09-16 | International Business Machines Corporation | Enhancement of magnetic media recording performance using ion irradiation to tailor exchange coupling |
| US20070195482A1 (en) * | 2006-02-23 | 2007-08-23 | Varian Semiconductor Equipment Associates, Inc. | Johnsen-Rahbek electrostatic chuck driven with AC voltage |
| KR200466175Y1 (ko) * | 2011-06-13 | 2013-04-03 | 백미정 | 유희 시설물 결합용 코일 스프링 연결 구조물 |
| CN104538457A (zh) * | 2015-01-15 | 2015-04-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
| US20250166959A1 (en) * | 2023-11-16 | 2025-05-22 | Axcelis Technologies, Inc. | High bandwidth variable dose ion implantation system and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA953823A (en) * | 1971-08-24 | 1974-08-27 | Western Electric Company, Incorporated | Ion beam control apparatus |
| US4063103A (en) * | 1975-04-11 | 1977-12-13 | Tokyo Shibaura Electric Co., Ltd. | Electron beam exposure apparatus |
| FR2412939A1 (fr) * | 1977-12-23 | 1979-07-20 | Anvar | Implanteur d'ions a fort courant |
| US4283631A (en) * | 1980-02-22 | 1981-08-11 | Varian Associates, Inc. | Bean scanning and method of use for ion implantation |
-
1981
- 1981-12-18 JP JP56205015A patent/JPS58106823A/ja active Granted
-
1982
- 1982-12-08 US US06/448,048 patent/US4481042A/en not_active Expired - Lifetime
- 1982-12-09 EP EP82306568A patent/EP0082640B1/en not_active Expired
- 1982-12-09 DE DE8282306568T patent/DE3277479D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4481042A (en) | 1984-11-06 |
| EP0082640A3 (en) | 1984-08-22 |
| DE3277479D1 (en) | 1987-11-19 |
| EP0082640B1 (en) | 1987-10-14 |
| JPS58106823A (ja) | 1983-06-25 |
| EP0082640A2 (en) | 1983-06-29 |
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