JPS58106823A - イオン注入方法 - Google Patents

イオン注入方法

Info

Publication number
JPS58106823A
JPS58106823A JP56205015A JP20501581A JPS58106823A JP S58106823 A JPS58106823 A JP S58106823A JP 56205015 A JP56205015 A JP 56205015A JP 20501581 A JP20501581 A JP 20501581A JP S58106823 A JPS58106823 A JP S58106823A
Authority
JP
Japan
Prior art keywords
ion
ion implantation
region
ions
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56205015A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643048B2 (cg-RX-API-DMAC7.html
Inventor
Tadahiro Takigawa
忠宏 滝川
Isao Sasaki
勲 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56205015A priority Critical patent/JPS58106823A/ja
Priority to US06/448,048 priority patent/US4481042A/en
Priority to EP82306568A priority patent/EP0082640B1/en
Priority to DE8282306568T priority patent/DE3277479D1/de
Publication of JPS58106823A publication Critical patent/JPS58106823A/ja
Publication of JPS643048B2 publication Critical patent/JPS643048B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
JP56205015A 1981-12-18 1981-12-18 イオン注入方法 Granted JPS58106823A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56205015A JPS58106823A (ja) 1981-12-18 1981-12-18 イオン注入方法
US06/448,048 US4481042A (en) 1981-12-18 1982-12-08 Ion implantation method
EP82306568A EP0082640B1 (en) 1981-12-18 1982-12-09 Ion implantation method
DE8282306568T DE3277479D1 (en) 1981-12-18 1982-12-09 Ion implantation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56205015A JPS58106823A (ja) 1981-12-18 1981-12-18 イオン注入方法

Publications (2)

Publication Number Publication Date
JPS58106823A true JPS58106823A (ja) 1983-06-25
JPS643048B2 JPS643048B2 (cg-RX-API-DMAC7.html) 1989-01-19

Family

ID=16500029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56205015A Granted JPS58106823A (ja) 1981-12-18 1981-12-18 イオン注入方法

Country Status (4)

Country Link
US (1) US4481042A (cg-RX-API-DMAC7.html)
EP (1) EP0082640B1 (cg-RX-API-DMAC7.html)
JP (1) JPS58106823A (cg-RX-API-DMAC7.html)
DE (1) DE3277479D1 (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143630A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd イオン注入方法
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JP2005026692A (ja) * 2003-07-01 2005-01-27 Samsung Electronics Co Ltd 半導体ウェーハの各領域別に不純物の濃度が異なる集積回路半導体素子およびその製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140175A (ja) * 1984-12-13 1986-06-27 Semiconductor Energy Lab Co Ltd 被膜作製方法
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
JPS60243960A (ja) * 1984-05-18 1985-12-03 Hitachi Ltd イオンマイクロビ−ム装置
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
JPS61237421A (ja) * 1985-04-15 1986-10-22 Hitachi Ltd 半導体装置の製造方法
FR2592224B1 (fr) * 1985-12-20 1988-10-07 Thomson Csf Transistor a effet de champ, et circuit integre logique comportant un tel transistor
FR2592225B1 (fr) * 1985-12-20 1988-02-05 Thomson Csf Transistor hyperfrequence de puissance
US5256579A (en) * 1989-04-03 1993-10-26 Massachusetts Institute Of Technology Tunable-frequency Gunn diodes fabrication with focused ion beams
DE4339190B4 (de) * 1992-11-16 2006-04-13 Denso Corp., Kariya Halbleiter-Beschleunigungsmesser
JP2000040691A (ja) * 1998-07-21 2000-02-08 Oki Electric Ind Co Ltd 半導体装置製造方法
US7425353B2 (en) * 2004-01-29 2008-09-16 International Business Machines Corporation Enhancement of magnetic media recording performance using ion irradiation to tailor exchange coupling
US20070195482A1 (en) * 2006-02-23 2007-08-23 Varian Semiconductor Equipment Associates, Inc. Johnsen-Rahbek electrostatic chuck driven with AC voltage
KR200466175Y1 (ko) * 2011-06-13 2013-04-03 백미정 유희 시설물 결합용 코일 스프링 연결 구조물
CN104538457A (zh) * 2015-01-15 2015-04-22 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
US20250166959A1 (en) * 2023-11-16 2025-05-22 Axcelis Technologies, Inc. High bandwidth variable dose ion implantation system and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA953823A (en) * 1971-08-24 1974-08-27 Western Electric Company, Incorporated Ion beam control apparatus
US4063103A (en) * 1975-04-11 1977-12-13 Tokyo Shibaura Electric Co., Ltd. Electron beam exposure apparatus
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US4283631A (en) * 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143630A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd イオン注入方法
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JP2005026692A (ja) * 2003-07-01 2005-01-27 Samsung Electronics Co Ltd 半導体ウェーハの各領域別に不純物の濃度が異なる集積回路半導体素子およびその製造方法

Also Published As

Publication number Publication date
JPS643048B2 (cg-RX-API-DMAC7.html) 1989-01-19
US4481042A (en) 1984-11-06
EP0082640A3 (en) 1984-08-22
DE3277479D1 (en) 1987-11-19
EP0082640B1 (en) 1987-10-14
EP0082640A2 (en) 1983-06-29

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