JPS643046B2 - - Google Patents
Info
- Publication number
- JPS643046B2 JPS643046B2 JP57087878A JP8787882A JPS643046B2 JP S643046 B2 JPS643046 B2 JP S643046B2 JP 57087878 A JP57087878 A JP 57087878A JP 8787882 A JP8787882 A JP 8787882A JP S643046 B2 JPS643046 B2 JP S643046B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- film
- substrate
- semiconductor film
- exposed portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/3238—
-
- H10P14/2921—
-
- H10P14/3411—
-
- H10P14/3458—
-
- H10P14/3808—
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- H10P14/382—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57087878A JPS5825221A (ja) | 1982-05-26 | 1982-05-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57087878A JPS5825221A (ja) | 1982-05-26 | 1982-05-26 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14327079A Division JPS5667923A (en) | 1979-11-07 | 1979-11-07 | Preparation method of semiconductor system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5825221A JPS5825221A (ja) | 1983-02-15 |
| JPS643046B2 true JPS643046B2 (member.php) | 1989-01-19 |
Family
ID=13927117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57087878A Granted JPS5825221A (ja) | 1982-05-26 | 1982-05-26 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5825221A (member.php) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6156956A (ja) * | 1984-08-28 | 1986-03-22 | Seiko Instr & Electronics Ltd | 基準電極 |
| JPS6163049A (ja) * | 1984-09-04 | 1986-04-01 | Agency Of Ind Science & Technol | Soi形成方法 |
| JPS6476760A (en) * | 1987-09-18 | 1989-03-22 | Toshiba Corp | Manufacture of semiconductor device |
| US5011589A (en) * | 1988-09-30 | 1991-04-30 | Kabushiki Kaisha Toshiba | Solution component sensor device |
| JP2009224727A (ja) | 2008-03-18 | 2009-10-01 | Semiconductor Technology Academic Research Center | 半導体装置とその製造方法 |
| JP5373718B2 (ja) * | 2010-08-17 | 2013-12-18 | 株式会社半導体理工学研究センター | 半導体装置の製造方法 |
-
1982
- 1982-05-26 JP JP57087878A patent/JPS5825221A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5825221A (ja) | 1983-02-15 |
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