JPS6428953A - Semiconductor device - Google Patents

Abstract

PURPOSE:To make this device satisfiable with its chip area smaller than conventionally, by disposing an EQR electrode circularly on a peripheral part of an insulation layer on a chip surface so that it is in direct contact with a semiconductor substrate under the insulation layer and next forming contact parts locally. CONSTITUTION:An EQR electrode 5 is circularly disposed on a peripheral part of an insulation layer 4 on a chip T's surface where an FET is formed, and it is in contact with only four corners of the chip T. Namely the EQR electrode 5 is in direct contact with a semiconductor substrate 1 through holes 4a formed in the insulation layer 4 on the corners of the quadrangular chip T. The EQR electrode 5 is formed only on the insulation layer 4 at positions of sides of the chip T, but it does not contact with the semiconductor substrate 1 there. The EQR electrode 5 can be formed much larger in width in degree of no contact than conventionally at the positions of the sides of the chip T. Accordingly this device is made satisfiable with a small chip area without a large chip area required as conventionally.