JPH0438065U - - Google Patents
Info
- Publication number
- JPH0438065U JPH0438065U JP8023090U JP8023090U JPH0438065U JP H0438065 U JPH0438065 U JP H0438065U JP 8023090 U JP8023090 U JP 8023090U JP 8023090 U JP8023090 U JP 8023090U JP H0438065 U JPH0438065 U JP H0438065U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- vertical field
- electrode
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第１図はこの考案の第１実施例のＮチヤンネル
型縦型電界効果トランジスタの縦断面図、第２図
はこの考案の第２実施例の縦断面図、第３図は第
１実施例に対応した従来例の縦断面図、第４図は
第２実施例に対応した従来例の縦断面図である。
１……ゲート電極、２……ソース電極、３……
ＥＱＲ電極、５，６……Ｐ型拡散層。
Fig. 1 is a longitudinal sectional view of an N-channel vertical field effect transistor according to the first embodiment of this invention, Fig. 2 is a longitudinal sectional view of a second embodiment of this invention, and Fig. 3 is a longitudinal sectional view of the first embodiment of the invention. FIG. 4 is a vertical sectional view of a conventional example corresponding to the second embodiment. 1... Gate electrode, 2... Source electrode, 3...
EQR electrode, 5, 6...P type diffusion layer.
Claims (1)
同電位に固定された電極の間で耐圧が決定する縦
型電界効果トランジスタにおいて、 ゲート電極下の拡散層を部分的に削除したこと
を特徴とする縦型電界効果トランジスタ。 (2) ソース電極と、外周部に設けられた裏面と
同電位に固定された電極の間で耐圧が決定する縦
型電界効果トランジスタにおいて、 ゲート電極下の拡散層を全て削除したことを特
徴とする縦型電界効果トランジスタ。[Claims for Utility Model Registration] (1) In a vertical field effect transistor whose breakdown voltage is determined between a source electrode and an electrode provided at the outer periphery and fixed at the same potential as the back surface, a diffusion layer under the gate electrode. A vertical field effect transistor characterized by partially removing the . (2) A vertical field effect transistor in which the withstand voltage is determined between the source electrode and an electrode provided at the outer periphery that is fixed at the same potential as the back surface, is characterized by completely eliminating the diffusion layer under the gate electrode. Vertical field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8023090U JPH0438065U (en) | 1990-07-27 | 1990-07-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8023090U JPH0438065U (en) | 1990-07-27 | 1990-07-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0438065U true JPH0438065U (en) | 1992-03-31 |
Family
ID=31625102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8023090U Pending JPH0438065U (en) | 1990-07-27 | 1990-07-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0438065U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6428953A (en) * | 1987-07-24 | 1989-01-31 | Matsushita Electric Works Ltd | Semiconductor device |
| JPH01290265A (en) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | Mos type semiconductor device |
| JPH025484A (en) * | 1988-06-23 | 1990-01-10 | Fuji Electric Co Ltd | Mos semiconductor device |
-
1990
- 1990-07-27 JP JP8023090U patent/JPH0438065U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6428953A (en) * | 1987-07-24 | 1989-01-31 | Matsushita Electric Works Ltd | Semiconductor device |
| JPH01290265A (en) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | Mos type semiconductor device |
| JPH025484A (en) * | 1988-06-23 | 1990-01-10 | Fuji Electric Co Ltd | Mos semiconductor device |