JPS5687352A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5687352A JPS5687352A JP16426679A JP16426679A JPS5687352A JP S5687352 A JPS5687352 A JP S5687352A JP 16426679 A JP16426679 A JP 16426679A JP 16426679 A JP16426679 A JP 16426679A JP S5687352 A JPS5687352 A JP S5687352A
- Authority
- JP
- Japan
- Prior art keywords
- type
- resistor
- layer
- collector region
- surface layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010410 layer Substances 0.000 abstract 5
- 239000002344 surface layer Substances 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a resistor body having a small occupying area in the semiconductor device by a method wherein a reverse conducting collector region and a reverse conducting resistor region coming in contact with the collector region are formed on a unilateral conducting semiconductor layer having partially a buried layer of high impurity concentration. CONSTITUTION:A p type surface layer 10 is provided on the p type substrate 1 having partially the n<+> type buried layer 2 of high concentration, and the n type collector region 11 is formed in the p type surface layer on the buried layer. At the same time, the n<+> type resistor layer 5 is formed in the p type surface layer to come in contact with the n type collector region. Accordingly the occupying area of the resistor can be decreased, and the resistor can be arranged freely in the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16426679A JPS5687352A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16426679A JPS5687352A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5687352A true JPS5687352A (en) | 1981-07-15 |
Family
ID=15789813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16426679A Pending JPS5687352A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5687352A (en) |
-
1979
- 1979-12-18 JP JP16426679A patent/JPS5687352A/en active Pending
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