JPS6427221A - Manufacture of laminated type semiconductor device - Google Patents
Manufacture of laminated type semiconductor deviceInfo
- Publication number
- JPS6427221A JPS6427221A JP18214287A JP18214287A JPS6427221A JP S6427221 A JPS6427221 A JP S6427221A JP 18214287 A JP18214287 A JP 18214287A JP 18214287 A JP18214287 A JP 18214287A JP S6427221 A JPS6427221 A JP S6427221A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystalline
- substrate
- epitaxial growth
- lateral epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 238000001953 recrystallisation Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18214287A JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18214287A JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6427221A true JPS6427221A (en) | 1989-01-30 |
| JPH0573324B2 JPH0573324B2 (OSRAM) | 1993-10-14 |
Family
ID=16113085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18214287A Granted JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427221A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005333136A (ja) * | 2004-05-17 | 2005-12-02 | Samsung Electronics Co Ltd | 電界効果トランジスタを備える半導体素子及びその製造方法 |
| JP2006080486A (ja) * | 2004-09-08 | 2006-03-23 | Samsung Electronics Co Ltd | エピタキシャル膜の形成方法と、これを用いた薄膜形成方法、及び半導体装置の製造方法 |
-
1987
- 1987-07-23 JP JP18214287A patent/JPS6427221A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005333136A (ja) * | 2004-05-17 | 2005-12-02 | Samsung Electronics Co Ltd | 電界効果トランジスタを備える半導体素子及びその製造方法 |
| JP2006080486A (ja) * | 2004-09-08 | 2006-03-23 | Samsung Electronics Co Ltd | エピタキシャル膜の形成方法と、これを用いた薄膜形成方法、及び半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0573324B2 (OSRAM) | 1993-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |