JPH0573324B2 - - Google Patents
Info
- Publication number
- JPH0573324B2 JPH0573324B2 JP18214287A JP18214287A JPH0573324B2 JP H0573324 B2 JPH0573324 B2 JP H0573324B2 JP 18214287 A JP18214287 A JP 18214287A JP 18214287 A JP18214287 A JP 18214287A JP H0573324 B2 JPH0573324 B2 JP H0573324B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon
- layer
- opening
- crystal semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 75
- 239000013078 crystal Substances 0.000 claims description 50
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000010410 layer Substances 0.000 description 58
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 239000011229 interlayer Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18214287A JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18214287A JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6427221A JPS6427221A (en) | 1989-01-30 |
| JPH0573324B2 true JPH0573324B2 (OSRAM) | 1993-10-14 |
Family
ID=16113085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18214287A Granted JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427221A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005022306B4 (de) * | 2004-05-17 | 2009-12-31 | Samsung Electronics Co., Ltd., Suwon | Verfahren zum Herstellen einer Halbleitervorrichtung mit einem Fin-Feldeffekttransistor (FinFET) |
| JP4510707B2 (ja) * | 2004-09-08 | 2010-07-28 | 三星電子株式会社 | エピタキシャル膜の形成方法と、これを用いた薄膜形成方法、及び半導体装置の製造方法 |
-
1987
- 1987-07-23 JP JP18214287A patent/JPS6427221A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6427221A (en) | 1989-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |