JPS6419771A - Insulated-gate bipolar transistor - Google Patents

Insulated-gate bipolar transistor

Info

Publication number
JPS6419771A
JPS6419771A JP17612087A JP17612087A JPS6419771A JP S6419771 A JPS6419771 A JP S6419771A JP 17612087 A JP17612087 A JP 17612087A JP 17612087 A JP17612087 A JP 17612087A JP S6419771 A JPS6419771 A JP S6419771A
Authority
JP
Japan
Prior art keywords
region
protons
field effect
bipolar transistor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17612087A
Other languages
Japanese (ja)
Other versions
JPH0722198B2 (en
Inventor
Katsunori Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62176120A priority Critical patent/JPH0722198B2/en
Publication of JPS6419771A publication Critical patent/JPS6419771A/en
Publication of JPH0722198B2 publication Critical patent/JPH0722198B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To shorten the turn-off time, to widen the device operating frequency range, and to minimize the increase in ON resistance by a method wherein protons are so projected on the substrate surface opposite to the other mounted with a field effect transistor that they may land in the bipolar transistor region. CONSTITUTION:Incorporated into the surface 10a of a substrate 10 are a bipolar transistor collector layer 13, field effect transistor source layer 16, channel- forming layer 14, gate oxide film 11, and gate 12. Protons P first arrive at at the substrate 10 on its surface 10b so that they may not affect a field effect transistor. Deposited from the surface 10b are a 400-500mum-thick strongly p-type emitter region 1, several mum-thick strongly n-type buffer layer 2, and 50-100mum-thick high-resistance, weakly n-type base region 3. Protons are set to have a range of 400-500mum in silicon so that the proton irradiation range IR may terminate in a region, hatched in the figure, nearer to the emitter region 1 in the base region 3.
JP62176120A 1987-07-15 1987-07-15 Insulated gate type bipolar transistor Expired - Lifetime JPH0722198B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62176120A JPH0722198B2 (en) 1987-07-15 1987-07-15 Insulated gate type bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62176120A JPH0722198B2 (en) 1987-07-15 1987-07-15 Insulated gate type bipolar transistor

Publications (2)

Publication Number Publication Date
JPS6419771A true JPS6419771A (en) 1989-01-23
JPH0722198B2 JPH0722198B2 (en) 1995-03-08

Family

ID=16008026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62176120A Expired - Lifetime JPH0722198B2 (en) 1987-07-15 1987-07-15 Insulated gate type bipolar transistor

Country Status (1)

Country Link
JP (1) JPH0722198B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03166766A (en) * 1989-11-27 1991-07-18 Mitsubishi Electric Corp Insulated-gate bipolar transistor and manufacture thereof
JPH03171777A (en) * 1989-11-30 1991-07-25 Toshiba Corp Semiconductor device
JPH04214674A (en) * 1990-12-12 1992-08-05 Mitsubishi Electric Corp Insulated gate bipolar transistor and manufacture thereof
US5151766A (en) * 1989-05-18 1992-09-29 Asea Brown Boveri Ltd. Semiconductor component
EP0913859A1 (en) * 1997-03-25 1999-05-06 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
WO2000031800A1 (en) * 1998-11-26 2000-06-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and fabrication method therefor
JP2000269234A (en) * 1999-03-15 2000-09-29 Toshiba Corp Semiconductor device
US6610572B1 (en) 1999-11-26 2003-08-26 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing the same
US6774407B2 (en) * 1996-11-13 2004-08-10 Toyota Jidosha Kabushiki Kaisha Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response
US8058693B2 (en) 2008-12-18 2011-11-15 Kabushiki Kaisha Toshiba Semiconductor device having switching element and method for fabricating semiconductor device having switching element
JP2012238904A (en) * 2005-11-14 2012-12-06 Fuji Electric Co Ltd Semiconductor device and manufacturing method of the same
JP2014138173A (en) * 2013-01-18 2014-07-28 Shi Exaination & Inspection Ltd Method of manufacturing semiconductor device, and substrate processing system
WO2018030444A1 (en) * 2016-08-12 2018-02-15 富士電機株式会社 Semiconductor device and method for producing semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113686A (en) * 1976-03-17 1977-09-22 Westinghouse Electric Corp Method of producing semiconductor device
JPS60207376A (en) * 1984-03-31 1985-10-18 Toyota Central Res & Dev Lab Inc High-speed electrostatic induction thyristor and manufacture thereof
JPS6276556A (en) * 1985-09-28 1987-04-08 Toyota Central Res & Dev Lab Inc High-speed electrostatic induction thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113686A (en) * 1976-03-17 1977-09-22 Westinghouse Electric Corp Method of producing semiconductor device
JPS60207376A (en) * 1984-03-31 1985-10-18 Toyota Central Res & Dev Lab Inc High-speed electrostatic induction thyristor and manufacture thereof
JPS6276556A (en) * 1985-09-28 1987-04-08 Toyota Central Res & Dev Lab Inc High-speed electrostatic induction thyristor

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151766A (en) * 1989-05-18 1992-09-29 Asea Brown Boveri Ltd. Semiconductor component
JPH03166766A (en) * 1989-11-27 1991-07-18 Mitsubishi Electric Corp Insulated-gate bipolar transistor and manufacture thereof
JPH03171777A (en) * 1989-11-30 1991-07-25 Toshiba Corp Semiconductor device
JPH04214674A (en) * 1990-12-12 1992-08-05 Mitsubishi Electric Corp Insulated gate bipolar transistor and manufacture thereof
US6774407B2 (en) * 1996-11-13 2004-08-10 Toyota Jidosha Kabushiki Kaisha Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response
EP0913859A4 (en) * 1997-03-25 2004-04-14 Rohm Co Ltd Semiconductor device and method for manufacturing the same
EP0913859A1 (en) * 1997-03-25 1999-05-06 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
WO2000031800A1 (en) * 1998-11-26 2000-06-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and fabrication method therefor
JP2000269234A (en) * 1999-03-15 2000-09-29 Toshiba Corp Semiconductor device
US6610572B1 (en) 1999-11-26 2003-08-26 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing the same
US6759301B2 (en) 1999-11-26 2004-07-06 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing the same
US6762097B2 (en) 1999-11-26 2004-07-13 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012238904A (en) * 2005-11-14 2012-12-06 Fuji Electric Co Ltd Semiconductor device and manufacturing method of the same
US8058693B2 (en) 2008-12-18 2011-11-15 Kabushiki Kaisha Toshiba Semiconductor device having switching element and method for fabricating semiconductor device having switching element
JP2014138173A (en) * 2013-01-18 2014-07-28 Shi Exaination & Inspection Ltd Method of manufacturing semiconductor device, and substrate processing system
WO2018030444A1 (en) * 2016-08-12 2018-02-15 富士電機株式会社 Semiconductor device and method for producing semiconductor device
US10840361B2 (en) 2016-08-12 2020-11-17 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US11094810B2 (en) 2016-08-12 2021-08-17 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPH0722198B2 (en) 1995-03-08

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