JPS6413763A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS6413763A JPS6413763A JP62170177A JP17017787A JPS6413763A JP S6413763 A JPS6413763 A JP S6413763A JP 62170177 A JP62170177 A JP 62170177A JP 17017787 A JP17017787 A JP 17017787A JP S6413763 A JPS6413763 A JP S6413763A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photodiode
- coupled device
- charge coupled
- surface side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To scale down the size of an element while forming the element having high sensibility and high resolution with excellent yield by shaping a photodiode onto the rear of a semiconductor substrate, forming a shift register by a charge coupled device on the surface side of the substrate and coupling these photodiode and charge coupled device by a gate electrode being shaped through the substrate from the surface side to the rear side and consisting of polycrystalline silicon. CONSTITUTION:A buried channel 12 is formed on the surface side of a P-type semiconductor substrate 11, and a shift register is constituted by a charge coupled device. A photodiode 21 by an N-type semiconductor region is shaped on the rear side of the substrate, and a gate electrode 22 composed of polycrystalline silicon is formed from the surface side to the rear side, penetrating the substrate 11 through an oxide film 23. The gate electrode 22 also fills the role of element isolation between picture elements for the photodiode 21 or channels for the charge coupled device. The thickness of the semiconductor substrate 11 is brought to approximately several dozen mum, and incident beams are applied from the rear of an element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62170177A JPH0691239B2 (en) | 1987-07-07 | 1987-07-07 | Solid-state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62170177A JPH0691239B2 (en) | 1987-07-07 | 1987-07-07 | Solid-state image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6413763A true JPS6413763A (en) | 1989-01-18 |
JPH0691239B2 JPH0691239B2 (en) | 1994-11-14 |
Family
ID=15900117
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62170177A Expired - Lifetime JPH0691239B2 (en) | 1987-07-07 | 1987-07-07 | Solid-state image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0691239B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02194558A (en) * | 1989-01-21 | 1990-08-01 | Nippondenso Co Ltd | Semiconductor device and manufacture thereof |
-
1987
- 1987-07-07 JP JP62170177A patent/JPH0691239B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02194558A (en) * | 1989-01-21 | 1990-08-01 | Nippondenso Co Ltd | Semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0691239B2 (en) | 1994-11-14 |
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