JPS6413763A - Solid-state image sensing device - Google Patents

Solid-state image sensing device

Info

Publication number
JPS6413763A
JPS6413763A JP62170177A JP17017787A JPS6413763A JP S6413763 A JPS6413763 A JP S6413763A JP 62170177 A JP62170177 A JP 62170177A JP 17017787 A JP17017787 A JP 17017787A JP S6413763 A JPS6413763 A JP S6413763A
Authority
JP
Japan
Prior art keywords
substrate
photodiode
coupled device
charge coupled
surface side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62170177A
Other languages
Japanese (ja)
Other versions
JPH0691239B2 (en
Inventor
Hidetsugu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62170177A priority Critical patent/JPH0691239B2/en
Publication of JPS6413763A publication Critical patent/JPS6413763A/en
Publication of JPH0691239B2 publication Critical patent/JPH0691239B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To scale down the size of an element while forming the element having high sensibility and high resolution with excellent yield by shaping a photodiode onto the rear of a semiconductor substrate, forming a shift register by a charge coupled device on the surface side of the substrate and coupling these photodiode and charge coupled device by a gate electrode being shaped through the substrate from the surface side to the rear side and consisting of polycrystalline silicon. CONSTITUTION:A buried channel 12 is formed on the surface side of a P-type semiconductor substrate 11, and a shift register is constituted by a charge coupled device. A photodiode 21 by an N-type semiconductor region is shaped on the rear side of the substrate, and a gate electrode 22 composed of polycrystalline silicon is formed from the surface side to the rear side, penetrating the substrate 11 through an oxide film 23. The gate electrode 22 also fills the role of element isolation between picture elements for the photodiode 21 or channels for the charge coupled device. The thickness of the semiconductor substrate 11 is brought to approximately several dozen mum, and incident beams are applied from the rear of an element.
JP62170177A 1987-07-07 1987-07-07 Solid-state image sensor Expired - Lifetime JPH0691239B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170177A JPH0691239B2 (en) 1987-07-07 1987-07-07 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170177A JPH0691239B2 (en) 1987-07-07 1987-07-07 Solid-state image sensor

Publications (2)

Publication Number Publication Date
JPS6413763A true JPS6413763A (en) 1989-01-18
JPH0691239B2 JPH0691239B2 (en) 1994-11-14

Family

ID=15900117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170177A Expired - Lifetime JPH0691239B2 (en) 1987-07-07 1987-07-07 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPH0691239B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194558A (en) * 1989-01-21 1990-08-01 Nippondenso Co Ltd Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194558A (en) * 1989-01-21 1990-08-01 Nippondenso Co Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPH0691239B2 (en) 1994-11-14

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