JPS6461056A - Solid-state image sensor - Google Patents
Solid-state image sensorInfo
- Publication number
- JPS6461056A JPS6461056A JP62219461A JP21946187A JPS6461056A JP S6461056 A JPS6461056 A JP S6461056A JP 62219461 A JP62219461 A JP 62219461A JP 21946187 A JP21946187 A JP 21946187A JP S6461056 A JPS6461056 A JP S6461056A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- infrared
- electrodes
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To obtain a solid-state image sensor having small characteristic change and high reliability against severe temperature change by forming an infrared- ray sensitive layer on an Si substrate. CONSTITUTION:After a P-type GaAs layer 2 is epitaxially grown as a buffer layer on a P-type or semi-insulating Si substrate 1, a P-type HgCdTe layer 3 is epitaxially grown as an infrared-ray sensing layer. Then, N-type diffused regions 4 are formed in a predetermined array, and the regions 4 are connected to a CCD chip 6 with Si as a substrate by in electrodes 5. A signal charge implanted layer 7 is provided corresponding to the electrodes 5 on the chip 6. Thus, a thermal expansion difference between an infrared-ray detector chip and the CCD chip is reduced, and the disconnection, exfoliation of the In electrodes can be suppressed against severe temperature change at the time of use. Accordingly, its reliability is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219461A JPH069243B2 (en) | 1987-09-01 | 1987-09-01 | Solid-state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219461A JPH069243B2 (en) | 1987-09-01 | 1987-09-01 | Solid-state image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6461056A true JPS6461056A (en) | 1989-03-08 |
JPH069243B2 JPH069243B2 (en) | 1994-02-02 |
Family
ID=16735790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62219461A Expired - Lifetime JPH069243B2 (en) | 1987-09-01 | 1987-09-01 | Solid-state image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH069243B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994017557A1 (en) * | 1993-01-19 | 1994-08-04 | Hughes Aircraft Company | Thermally matched readout/detector assembly and method for fabricating same |
US8154099B2 (en) | 2009-08-19 | 2012-04-10 | Raytheon Company | Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate |
GB2489924A (en) * | 2011-04-06 | 2012-10-17 | Isis Innovation | Integrating III-V or II-VI devices with high resistivity silicon or germanium substrates |
-
1987
- 1987-09-01 JP JP62219461A patent/JPH069243B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994017557A1 (en) * | 1993-01-19 | 1994-08-04 | Hughes Aircraft Company | Thermally matched readout/detector assembly and method for fabricating same |
US8154099B2 (en) | 2009-08-19 | 2012-04-10 | Raytheon Company | Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate |
GB2489924A (en) * | 2011-04-06 | 2012-10-17 | Isis Innovation | Integrating III-V or II-VI devices with high resistivity silicon or germanium substrates |
Also Published As
Publication number | Publication date |
---|---|
JPH069243B2 (en) | 1994-02-02 |
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