JPS6461056A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPS6461056A
JPS6461056A JP62219461A JP21946187A JPS6461056A JP S6461056 A JPS6461056 A JP S6461056A JP 62219461 A JP62219461 A JP 62219461A JP 21946187 A JP21946187 A JP 21946187A JP S6461056 A JPS6461056 A JP S6461056A
Authority
JP
Japan
Prior art keywords
layer
infrared
electrodes
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62219461A
Other languages
Japanese (ja)
Other versions
JPH069243B2 (en
Inventor
Yukihiko Maejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62219461A priority Critical patent/JPH069243B2/en
Publication of JPS6461056A publication Critical patent/JPS6461056A/en
Publication of JPH069243B2 publication Critical patent/JPH069243B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a solid-state image sensor having small characteristic change and high reliability against severe temperature change by forming an infrared- ray sensitive layer on an Si substrate. CONSTITUTION:After a P-type GaAs layer 2 is epitaxially grown as a buffer layer on a P-type or semi-insulating Si substrate 1, a P-type HgCdTe layer 3 is epitaxially grown as an infrared-ray sensing layer. Then, N-type diffused regions 4 are formed in a predetermined array, and the regions 4 are connected to a CCD chip 6 with Si as a substrate by in electrodes 5. A signal charge implanted layer 7 is provided corresponding to the electrodes 5 on the chip 6. Thus, a thermal expansion difference between an infrared-ray detector chip and the CCD chip is reduced, and the disconnection, exfoliation of the In electrodes can be suppressed against severe temperature change at the time of use. Accordingly, its reliability is improved.
JP62219461A 1987-09-01 1987-09-01 Solid-state image sensor Expired - Lifetime JPH069243B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219461A JPH069243B2 (en) 1987-09-01 1987-09-01 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219461A JPH069243B2 (en) 1987-09-01 1987-09-01 Solid-state image sensor

Publications (2)

Publication Number Publication Date
JPS6461056A true JPS6461056A (en) 1989-03-08
JPH069243B2 JPH069243B2 (en) 1994-02-02

Family

ID=16735790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219461A Expired - Lifetime JPH069243B2 (en) 1987-09-01 1987-09-01 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPH069243B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994017557A1 (en) * 1993-01-19 1994-08-04 Hughes Aircraft Company Thermally matched readout/detector assembly and method for fabricating same
US8154099B2 (en) 2009-08-19 2012-04-10 Raytheon Company Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate
GB2489924A (en) * 2011-04-06 2012-10-17 Isis Innovation Integrating III-V or II-VI devices with high resistivity silicon or germanium substrates

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994017557A1 (en) * 1993-01-19 1994-08-04 Hughes Aircraft Company Thermally matched readout/detector assembly and method for fabricating same
US8154099B2 (en) 2009-08-19 2012-04-10 Raytheon Company Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate
GB2489924A (en) * 2011-04-06 2012-10-17 Isis Innovation Integrating III-V or II-VI devices with high resistivity silicon or germanium substrates

Also Published As

Publication number Publication date
JPH069243B2 (en) 1994-02-02

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