JPS6413135U - - Google Patents

Info

Publication number
JPS6413135U
JPS6413135U JP10867687U JP10867687U JPS6413135U JP S6413135 U JPS6413135 U JP S6413135U JP 10867687 U JP10867687 U JP 10867687U JP 10867687 U JP10867687 U JP 10867687U JP S6413135 U JPS6413135 U JP S6413135U
Authority
JP
Japan
Prior art keywords
lead frame
semiconductor device
semiconductor element
thin film
metal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10867687U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10867687U priority Critical patent/JPS6413135U/ja
Publication of JPS6413135U publication Critical patent/JPS6413135U/ja
Pending legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の説明図で、aは上面図、bは
金属薄膜部5の拡大図、cはbのA−A′線断面
図で実施例1の場合の図面、dはcと同じくbの
A−A′線断面図で実施例2の場合の図面である
。第2図は従来の半導体装置を表わし、aは断面
図、bは側面図、cは上面図である。 1……半導体素子、2a,2b……リードフレ
ーム、3……金属細線、4……樹脂、4a……樹
脂部に設けた凹部、5……金属薄膜、5a……金
属薄膜部に設けた凹部。
FIG. 1 is an explanatory view of the present invention, in which a is a top view, b is an enlarged view of the metal thin film portion 5, c is a cross-sectional view taken along line A-A' of b, and is a drawing in the case of Example 1, and d is c. It is a sectional view taken along the line A-A' of FIG. FIG. 2 shows a conventional semiconductor device, in which a is a cross-sectional view, b is a side view, and c is a top view. 1...Semiconductor element, 2a, 2b...Lead frame, 3...Metal thin wire, 4...Resin, 4a...Recess provided in resin part, 5...Metal thin film, 5a...Provided in metal thin film part recess.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体素子をリードフレームに搭載し、かつ前
記半導体素子内の電極と前記リードフレームとを
金属細線により結線し、更に樹脂によりトランス
フアモールドして成る半導体装置において、モー
ルド表面に凹部を設け、更にその上に金属薄膜を
形成したことを特徴とする半導体装置。
In a semiconductor device in which a semiconductor element is mounted on a lead frame, electrodes in the semiconductor element and the lead frame are connected with thin metal wires, and transfer molded with resin, a recess is provided on the surface of the mold, and A semiconductor device characterized by having a metal thin film formed thereon.
JP10867687U 1987-07-14 1987-07-14 Pending JPS6413135U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10867687U JPS6413135U (en) 1987-07-14 1987-07-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10867687U JPS6413135U (en) 1987-07-14 1987-07-14

Publications (1)

Publication Number Publication Date
JPS6413135U true JPS6413135U (en) 1989-01-24

Family

ID=31344235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10867687U Pending JPS6413135U (en) 1987-07-14 1987-07-14

Country Status (1)

Country Link
JP (1) JPS6413135U (en)

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