JPS6410932B2 - - Google Patents
Info
- Publication number
- JPS6410932B2 JPS6410932B2 JP54112866A JP11286679A JPS6410932B2 JP S6410932 B2 JPS6410932 B2 JP S6410932B2 JP 54112866 A JP54112866 A JP 54112866A JP 11286679 A JP11286679 A JP 11286679A JP S6410932 B2 JPS6410932 B2 JP S6410932B2
- Authority
- JP
- Japan
- Prior art keywords
- defect
- pattern
- composition
- defective part
- defective portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007547 defect Effects 0.000 claims description 26
- 230000002950 deficient Effects 0.000 claims description 20
- 238000007689 inspection Methods 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000428 dust Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11286679A JPS5637626A (en) | 1979-09-05 | 1979-09-05 | Inspection device for pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11286679A JPS5637626A (en) | 1979-09-05 | 1979-09-05 | Inspection device for pattern |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5637626A JPS5637626A (en) | 1981-04-11 |
JPS6410932B2 true JPS6410932B2 (enrdf_load_stackoverflow) | 1989-02-22 |
Family
ID=14597482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11286679A Granted JPS5637626A (en) | 1979-09-05 | 1979-09-05 | Inspection device for pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5637626A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7935926B2 (en) * | 2005-07-30 | 2011-05-03 | Ho Seob Kim | Inspection equipment for fine pattern and morphology using microcolumn |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5192182A (enrdf_load_stackoverflow) * | 1975-02-10 | 1976-08-12 | ||
JPS5258373A (en) * | 1975-11-07 | 1977-05-13 | Fujitsu Ltd | Inspection for defects of pattern forming film |
-
1979
- 1979-09-05 JP JP11286679A patent/JPS5637626A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5637626A (en) | 1981-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100893910B1 (ko) | 시료의 측장방법 및 주사현미경 | |
US5128545A (en) | Method and apparatus for background correction in analysis of a specimen surface | |
JPH0557020B2 (enrdf_load_stackoverflow) | ||
JPH0191418A (ja) | マスク検査装置及び方法 | |
JPS6410932B2 (enrdf_load_stackoverflow) | ||
JP3751841B2 (ja) | 電子線を用いた検査装置及び電子線を用いた検査方法 | |
JP3420037B2 (ja) | 寸法測定装置及び寸法測定方法 | |
JP2000077019A (ja) | 電子顕微鏡 | |
JPS63122218A (ja) | 微細パタ−ン検査方法 | |
JPH08146137A (ja) | 差分画像処理を用いた放射線透視法 | |
JPH0261A (ja) | パターン欠陥修正装置 | |
US4704526A (en) | Apparatus of regulating shape of focused ion beams | |
JPH03235949A (ja) | マスク検査方法 | |
JPH0545946B2 (enrdf_load_stackoverflow) | ||
JPH0572234A (ja) | 半導体装置の配線評価方法 | |
JP3243822B2 (ja) | マスクの検査方法及びレチクル・マスク | |
JPS5954160A (ja) | 荷電粒子線装置 | |
JPH07325051A (ja) | 画像のアライメント補正方法 | |
JPH028199Y2 (enrdf_load_stackoverflow) | ||
JPH04337235A (ja) | 走査型電子顕微鏡 | |
JPS6323541B2 (enrdf_load_stackoverflow) | ||
JPS6016062B2 (ja) | 走査形電子顕微鏡 | |
JPS6235218B2 (enrdf_load_stackoverflow) | ||
JPH02236105A (ja) | 電子ビームによる測長方法 | |
JPS6041456B2 (ja) | 電子線を用いたパタ−ン検査装置 |