JPS6410932B2 - - Google Patents
Info
- Publication number
- JPS6410932B2 JPS6410932B2 JP54112866A JP11286679A JPS6410932B2 JP S6410932 B2 JPS6410932 B2 JP S6410932B2 JP 54112866 A JP54112866 A JP 54112866A JP 11286679 A JP11286679 A JP 11286679A JP S6410932 B2 JPS6410932 B2 JP S6410932B2
- Authority
- JP
- Japan
- Prior art keywords
- defect
- pattern
- composition
- defective part
- defective portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007547 defect Effects 0.000 claims description 26
- 230000002950 deficient Effects 0.000 claims description 20
- 238000007689 inspection Methods 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000428 dust Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
一般にパターン検査装置は、被検査パターンと
正常なパターンを比較し、両パターンで差異のあ
る場所を欠陥部分として表示する方式が採られて
いる。しかし、上記従来の方式では欠陥部分とし
て表示された差異のある場所が本当の欠陥なのか
或いは塵埃・汚れのようなものに過ぎないか、欠
陥だとしたらそれは修正可能な欠陥なのか或いは
不可能な欠陥なのか、といつたことを判定する手
段を備えておらず、従つて上記のような判定は全
て操作者が欠陥部分として表示された場所を観察
することによつて行なわれており、欠陥検査に長
時間を要するという欠点を有している。DETAILED DESCRIPTION OF THE INVENTION In general, a pattern inspection apparatus employs a method of comparing a pattern to be inspected with a normal pattern and displaying a location where there is a difference between the two patterns as a defective portion. However, in the conventional method described above, it is difficult to determine whether a location with a difference displayed as a defective part is a real defect or just something like dust or dirt, and if it is a defect, is it a defect that can be corrected or is it impossible? There is no means for determining whether the defect is a defective part or not, and therefore, all of the above determinations are made by the operator observing the location displayed as the defective part. It has the disadvantage that defect inspection requires a long time.
本発明は、上記従来技術の欠点を無くし、パタ
ーン検査方法において本当の欠陥なのか或いは塵
埃・汚れのようなものに過ぎないのか、あるいは
レーザー、電子ビーム、またはイオンビーム等に
より修正できる修正可能な欠陥なのか或いは不可
能な欠陥なのか、を判定することにより、パター
ン検査の効率化を図ろうとするものである。 The present invention eliminates the drawbacks of the prior art described above, and uses a pattern inspection method to determine whether the defect is a real defect, or whether it is just something like dust or dirt, or whether it is a correctable defect that can be corrected by laser, electron beam, ion beam, etc. The purpose is to improve the efficiency of pattern inspection by determining whether the defect is a defect or an impossible defect.
本発明は、パターン形成物と基板および塵埃・
汚れ等とはその組成が異なることに着目し、欠陥
部分として表示された場所の組成を検知すること
によつて上記判定を可能にしようとするものであ
る。 The present invention provides a pattern-formed product, a substrate, and dust/dust/
Focusing on the fact that the composition is different from that of dirt, etc., the above determination is made possible by detecting the composition of a location displayed as a defective portion.
次に本発明を一実施例に基づき説明する。 Next, the present invention will be explained based on one embodiment.
第１図は走査形電子顕微鏡を用いてパターン検
査を行なう場合について示したものである。第１
図に於て被験パターン基板１と、それとは組成が
異なるパターン形成物２とから成つている、この
被験パターン上を電子ビーム３がテレビジヨンの
ラスタのように走査し、電子ビーム３で照射され
た被験パターン部分から放出される二次電子を検
出することによつて被験パターン像が形成される
この被験パターン像は正常なパターンと比較され
パターン検査が行なわれる。 FIG. 1 shows a pattern inspection using a scanning electron microscope. 1st
In the figure, an electron beam 3 scans the test pattern like a television raster, which is made up of a test pattern substrate 1 and a pattern formed material 2 having a different composition from that of the test pattern substrate 1, and is irradiated with the electron beam 3. A test pattern image is formed by detecting secondary electrons emitted from the test pattern portion.This test pattern image is compared with a normal pattern to perform pattern inspection.
このようなパターン検査装置に於てはパターン
検査時に、正常パターンと異なる欠陥部分４が検
出された場合，欠陥部分４から放出される特性Ｘ
線５は通常のＸ線検出器６によつて検出され欠陥
部分４の組成が検知される。欠陥部分４の組成に
よつて１例として次のような判定が表示器７に表
示される。 In such a pattern inspection device, when a defective portion 4 different from a normal pattern is detected during pattern inspection, a characteristic X emitted from the defective portion 4 is detected.
Ray 5 is detected by a conventional X-ray detector 6 and the composition of defective portion 4 is detected. For example, the following determination is displayed on the display 7 depending on the composition of the defective portion 4.
欠陥部分４の組成がパターン形成物２と同じ
場合、レーザー、電子ビーム、またはイオンビ
ーム等により修正できるパターン残り修正可能
欠陥と判定する。 If the composition of the defective portion 4 is the same as that of the pattern formed object 2, it is determined that the remaining pattern is a correctable defect that can be corrected by a laser, an electron beam, an ion beam, or the like.
欠陥部分４の組成が基板１と同じ場合、パタ
ーン欠け修正不可能欠陥と判定する。 If the composition of the defective portion 4 is the same as that of the substrate 1, it is determined that the pattern chipping is an uncorrectable defect.
欠陥部分４の組成が，いづれでもない場
合，塵埃・汚れ等の非欠陥と判定する。 If the composition of the defective portion 4 is neither of these, it is determined that it is not a defect such as dust or dirt.
上記のように欠陥部分４の組成によつて本当
の欠陥かどうかレーザー，電子ビーム、または
イオンビーム等により修正できる修正可能な欠陥
かどうか、を判定し、修正可能な欠陥の場合はレ
ーザ８を欠陥部分４に照射することにより、パタ
ーン残りが除去され欠陥修正が行なわれる。 As mentioned above, depending on the composition of the defective portion 4, it is determined whether the defect is a real defect or not, and whether it is a correctable defect that can be corrected by laser, electron beam, ion beam, etc., and if the defect is correctable, laser 8 is applied. By irradiating the defective portion 4, the remaining pattern is removed and the defect is corrected.
本実施例では組成を欠陥修正の手段としてレー
ザーを用いたが、電子ビームやイオンビーム等に
よる修正も可能である。 In this example, a laser was used as a means for correcting composition defects, but correction using an electron beam, an ion beam, etc. is also possible.
本発明は走査型電子鏡以外の光を利用したパタ
ーン検査方法にも適用できる。 The present invention can also be applied to pattern inspection methods using light other than scanning electronic mirrors.
上記実施例に示すように本発明の欠陥部分に於
ける組成を検知することにより本当の欠陥なの
か修正可能な欠陥なのかといつた点を即座に判
定でき、パターン検査の効率化が可能となる。 As shown in the above embodiments, by detecting the composition of the defective portion of the present invention, it is possible to immediately determine whether the defect is a real defect or a defect that can be corrected, making it possible to improve the efficiency of pattern inspection. .
第１図は本発明を実施する検査装置の全体構成
図である。
１…基板、２…パターン形成物、３…電子ビー
ム、４…欠陥部分、５…特性Ｘ線、６…Ｘ線検出
器、７…表示器、８…レーザ。
FIG. 1 is an overall configuration diagram of an inspection device implementing the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Pattern formed object, 3... Electron beam, 4... Defect part, 5... Characteristic X-ray, 6... X-ray detector, 7... Display device, 8... Laser.
Claims (1)
に電子ビームを照射することによつて前記欠陥部
分から放出される特性Ｘ線を検出して前記欠陥部
分の組成を検知し、前記欠陥部分の組成を検知し
た結果に基づき修正可能欠陥か否かの判定をし、
前記判定結果に基づき修正可能欠陥の修正を行う
ことを特徴とするパターン検査方法。1 Detecting a defective part of a pattern, detecting characteristic X-rays emitted from the defective part by irradiating the defective part with an electron beam, detecting the composition of the defective part, and determining the composition of the defective part. Based on the detected results, determine whether the defect is correctable or not.
A pattern inspection method characterized in that a correctable defect is corrected based on the determination result.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11286679A JPS5637626A (en) | 1979-09-05 | 1979-09-05 | Inspection device for pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11286679A JPS5637626A (en) | 1979-09-05 | 1979-09-05 | Inspection device for pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5637626A JPS5637626A (en) | 1981-04-11 |
| JPS6410932B2 true JPS6410932B2 (en) | 1989-02-22 |
Family
ID=14597482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11286679A Granted JPS5637626A (en) | 1979-09-05 | 1979-09-05 | Inspection device for pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637626A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1910891B1 (en) * | 2005-07-30 | 2014-07-16 | Cebt Co., Ltd. | Inspection equipment for fine pattern and morphology using microcolumn |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192182A (en) * | 1975-02-10 | 1976-08-12 | ||
| JPS5258373A (en) * | 1975-11-07 | 1977-05-13 | Fujitsu Ltd | Inspection for defects of pattern forming film |
-
1979
- 1979-09-05 JP JP11286679A patent/JPS5637626A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5637626A (en) | 1981-04-11 |
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