JPH04337235A - Scanning type electron microscope - Google Patents
Scanning type electron microscopeInfo
- Publication number
- JPH04337235A JPH04337235A JP3110070A JP11007091A JPH04337235A JP H04337235 A JPH04337235 A JP H04337235A JP 3110070 A JP3110070 A JP 3110070A JP 11007091 A JP11007091 A JP 11007091A JP H04337235 A JPH04337235 A JP H04337235A
- Authority
- JP
- Japan
- Prior art keywords
- section
- alarm
- image information
- quality
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000007689 inspection Methods 0.000 abstract description 3
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、半導体基板上のパター
ンを電子を走査し、発生する2次電子を捕捉して観察及
びパターン寸法を測長する走査型電子顕微鏡に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning electron microscope that scans a pattern on a semiconductor substrate with electrons and captures generated secondary electrons for observation and measurement of pattern dimensions.
【0002】0002
【従来の技術】従来、この種の走査型顕微鏡は、図面に
は示さないが、電子を発生する電子銃と、発生する電子
を半導体基板上に走査する偏向走査部と、半導体基板よ
り発生する二次電子を捕捉する二次電子検出器と、この
二次電子検出器の出力を入力して処理する画像処理部と
、画像処理部の出力を演算処理する演算処理部と、演算
処理部の出力により半導体基板のパターンを描画するデ
ィスプレイとを有している。2. Description of the Related Art Conventionally, although not shown in the drawings, this type of scanning microscope has been equipped with an electron gun that generates electrons, a deflection scanning section that scans the generated electrons onto a semiconductor substrate, and an electron gun that generates electrons from the semiconductor substrate. A secondary electron detector that captures secondary electrons, an image processing section that inputs and processes the output of the secondary electron detector, an arithmetic processing section that processes the output of the image processing section, and an arithmetic processing section. It also has a display that draws a pattern on the semiconductor substrate using the output.
【0003】この走査型電子顕微鏡で半導体基板のパタ
ーンを検査する物合は、半導体基板をステージに載置し
、現状では、ほとんど自動的に電子を半導体基板に走査
し、ディスプレイにパターンを描画し、基準の図画と自
動的に比較して、良否を検査していた。[0003] When inspecting a pattern on a semiconductor substrate using a scanning electron microscope, the semiconductor substrate is placed on a stage, and at present, electrons are almost automatically scanned onto the semiconductor substrate and a pattern is drawn on a display. , and automatically compared it with standard drawings to check whether it was good or bad.
【0004】0004
【発明が解決しようとする課題】しかしながら、しばし
ば半導体基板に電子が蓄積され、走査される電子がで、
蓄積された電子と反揆し、ディスプレイ上に写し出され
る画面が白っぽくなったり、あるいは暗黒になったりす
るコントラストのとれない状態が生じ、検査が出来なく
なることがある。このため、常にディスプレイを観視し
て画面不良が生じたときに装置を停止させていた。従っ
て、一人で何台も分担できないという問題があり、自動
化されているにもかかわらず、作業効率が悪いという欠
点がある。[Problem to be Solved by the Invention] However, electrons are often accumulated in the semiconductor substrate, and the electrons that are scanned are
When the electrons react with the accumulated electrons, the screen displayed on the display becomes whitish or dark, resulting in a lack of contrast, which may make inspection impossible. For this reason, the display is constantly viewed and the device is stopped when a screen defect occurs. Therefore, there is a problem that one person cannot handle multiple machines, and even though it is automated, there is a drawback that work efficiency is low.
【0005】本発明の目的は、かかる問題を解消する作
業効率の良い走査型電子顕微鏡を提供することである。[0005] An object of the present invention is to provide a scanning electron microscope that solves these problems and has good working efficiency.
【0006】[0006]
【課題を解決するための手段】本発明の走査型電子顕微
鏡は、二次電子より得られる画像信号を記憶する画像記
憶部と、記憶される画像信号と基準画像信号を比較する
比較部と、この比較部の出力により警報を発する警報部
とを備えている。[Means for Solving the Problems] The scanning electron microscope of the present invention includes: an image storage unit that stores an image signal obtained from secondary electrons; a comparison unit that compares the stored image signal with a reference image signal; It also includes an alarm section that issues an alarm based on the output of the comparison section.
【0007】[0007]
【実施例】次に本発明について図面を参照して説明する
。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【0008】図1は本発明の走査型顕微鏡の一実施例に
おける概略を示すブロック図である。この走査型顕微鏡
は、同図に示すように、画像処理部3の出力信号を記憶
する画像記憶部3と、画像記憶部3に記憶される情報信
号を順次抽出して、明彩度パターンの許容基準信号と比
較する比較部4と、比較部4の判定により警報を発する
警報部5とを設けたことである。それ以外は従来と同じ
である。次にこの走査型顕微鏡の動作を説明する。まず
、従来例で説明したように、半導体基板である試料8に
電子線を走査し、二次電子を取り込み、ディスプレイ1
0に描画するとともに画像記憶部3に描画情報を記憶す
る。画像記憶部3はその描画情報を順次比較部4に送る
。比較部では明度(コントラスト)を許容する基準情報
信号と比較し、良否の判定する。もし良なら、比較部は
描画情報を消去し、否なら信号を出力し、警報部5は警
報を発生する。作業者はこの警報を聞き、装置を停止す
る。FIG. 1 is a block diagram schematically showing an embodiment of a scanning microscope according to the present invention. As shown in the figure, this scanning microscope has an image storage section 3 that stores output signals of an image processing section 3, and sequentially extracts information signals stored in the image storage section 3 to create a brightness/saturation pattern. This is achieved by providing a comparison section 4 that compares the signal with an acceptable reference signal, and an alarm section 5 that issues an alarm based on the determination made by the comparison section 4. Other than that, it is the same as before. Next, the operation of this scanning microscope will be explained. First, as explained in the conventional example, an electron beam is scanned on the sample 8 which is a semiconductor substrate, secondary electrons are captured, and the display 1
0, and the drawing information is stored in the image storage unit 3. The image storage section 3 sequentially sends the drawing information to the comparison section 4. The comparison section compares the brightness (contrast) with a standard information signal that allows for the comparison and determines whether it is good or bad. If it is good, the comparison section erases the drawing information, and if it is not, it outputs a signal, and the alarm section 5 generates an alarm. The operator hears this alarm and stops the equipment.
【0009】[0009]
【発明の効果】以上説明したように本発明は、画像情報
を抽出して、基準画像情報と比較して画像情報の良否を
判定する手段と、否の場合に警報を発生する手段とを設
けることによって、常にディスプレイ画像を監視するこ
となく検査出来る作業効率の高い走査型電子顕微鏡が得
られるという効果がある。[Effects of the Invention] As explained above, the present invention includes means for extracting image information and comparing it with reference image information to determine whether the image information is good or bad, and means for generating an alarm if the image information is not good. This has the effect of providing a highly efficient scanning electron microscope that can perform inspections without constantly monitoring display images.
【図1】本発明の一実施例を示す走査型顕微鏡のブロッ
ク図である。FIG. 1 is a block diagram of a scanning microscope showing one embodiment of the present invention.
1 電子銃 2 二次電子検出器 3 画像記憶部 4 比較部 5 警報部 6 画像処理部 7 演算処理部 8 試料 9 偏向走査部 10 ディスプレイ 1 Electron gun 2 Secondary electron detector 3 Image storage section 4 Comparison section 5 Alarm section 6 Image processing section 7 Arithmetic processing unit 8 Sample 9 Deflection scanning section 10 Display
Claims (1)
生する二次電子を検出して前記被測定試料面を撮像する
走査型電子顕微鏡において、前記二次電子より得られる
画像信号を記憶する画像記憶部と、記憶される画像信号
と基準画像信号を比較する比較部と、この比較部の出力
により警報を発する警報部とを備えることを特徴とする
走査型電子顕微鏡。1. A scanning electron microscope that deflects and scans electrons onto a surface of a sample to be measured, detects generated secondary electrons, and images the surface of the sample to be measured, wherein an image signal obtained from the secondary electrons is stored. 1. A scanning electron microscope comprising: an image storage section that compares a stored image signal with a reference image signal; and an alarm section that issues an alarm based on the output of the comparison section.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3110070A JPH04337235A (en) | 1991-05-15 | 1991-05-15 | Scanning type electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3110070A JPH04337235A (en) | 1991-05-15 | 1991-05-15 | Scanning type electron microscope |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04337235A true JPH04337235A (en) | 1992-11-25 |
Family
ID=14526292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3110070A Pending JPH04337235A (en) | 1991-05-15 | 1991-05-15 | Scanning type electron microscope |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04337235A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0781977A3 (en) * | 1995-12-28 | 2001-10-17 | Hitachi, Ltd. | Pattern shape inspection apparatus for forming specimen image on display apparatus |
US6900645B2 (en) | 2000-05-30 | 2005-05-31 | Fab Solutions, Inc. | Semiconductor device test method and semiconductor device tester |
JP2005191017A (en) * | 2005-03-25 | 2005-07-14 | Hitachi Ltd | Scanning electron microscope |
-
1991
- 1991-05-15 JP JP3110070A patent/JPH04337235A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0781977A3 (en) * | 1995-12-28 | 2001-10-17 | Hitachi, Ltd. | Pattern shape inspection apparatus for forming specimen image on display apparatus |
US6900645B2 (en) | 2000-05-30 | 2005-05-31 | Fab Solutions, Inc. | Semiconductor device test method and semiconductor device tester |
US6914444B2 (en) | 2000-05-30 | 2005-07-05 | Fab Solutions, Inc. | Semiconductor device test method and semiconductor device tester |
US7049834B2 (en) | 2000-05-30 | 2006-05-23 | Fab Solutions, Inc | Semiconductor device test method and semiconductor device tester |
US7420379B2 (en) | 2000-05-30 | 2008-09-02 | Topcon Corporation | Semiconductor device test method and semiconductor device tester |
US7550982B2 (en) | 2000-05-30 | 2009-06-23 | Topcon Corporation | Semiconductor device test method for comparing a first area with a second area |
JP2005191017A (en) * | 2005-03-25 | 2005-07-14 | Hitachi Ltd | Scanning electron microscope |
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