JPS6410097B2 - - Google Patents
Info
- Publication number
- JPS6410097B2 JPS6410097B2 JP6956181A JP6956181A JPS6410097B2 JP S6410097 B2 JPS6410097 B2 JP S6410097B2 JP 6956181 A JP6956181 A JP 6956181A JP 6956181 A JP6956181 A JP 6956181A JP S6410097 B2 JPS6410097 B2 JP S6410097B2
- Authority
- JP
- Japan
- Prior art keywords
- whiskers
- film
- wiring
- depth
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6956181A JPS57183053A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
| DE19823217026 DE3217026A1 (de) | 1981-05-06 | 1982-05-06 | Halbleitervorrichtung |
| US06/717,597 US4899206A (en) | 1981-05-06 | 1985-04-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6956181A JPS57183053A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57183053A JPS57183053A (en) | 1982-11-11 |
| JPS6410097B2 true JPS6410097B2 (cs) | 1989-02-21 |
Family
ID=13406285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6956181A Granted JPS57183053A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57183053A (cs) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4890151A (en) * | 1983-03-12 | 1989-12-26 | Ricoh Company, Ltd. | Thin-film and its forming method |
| JPH07120655B2 (ja) * | 1988-10-25 | 1995-12-20 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US7157381B2 (en) * | 2004-06-15 | 2007-01-02 | Infineon Technologies Ag | Method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55158649A (en) * | 1979-05-30 | 1980-12-10 | Fujitsu Ltd | Manufacture of electrode wiring |
| JPS57124431A (en) * | 1981-01-27 | 1982-08-03 | Toshiba Corp | Manufacture of semiconductor device |
-
1981
- 1981-05-06 JP JP6956181A patent/JPS57183053A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57183053A (en) | 1982-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3704427B2 (ja) | 半導体装置の銅金属配線形成方法 | |
| US4639277A (en) | Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material | |
| JP3535893B2 (ja) | 半導体装置の金属層形成方法 | |
| US4899206A (en) | Semiconductor device | |
| US3743894A (en) | Electromigration resistant semiconductor contacts and the method of producing same | |
| JP2921799B2 (ja) | 半導体素子形成用高純度スパッタターゲットの製造方法 | |
| JPH03148131A (ja) | 半導体素子及びその製造方法 | |
| JPS6410097B2 (cs) | ||
| US3848330A (en) | Electromigration resistant semiconductor contacts and the method of producing same | |
| JPS6226575B2 (cs) | ||
| JP3228660B2 (ja) | 半導体素子形成用高純度金属材の製造方法 | |
| JP3179065B2 (ja) | 半導体素子の製造方法 | |
| EP0443296B1 (en) | Process for obtaining multilayer metallization of the back of a semiconductor substrate | |
| JPH05251378A (ja) | 半導体装置の製造方法 | |
| JPH02237033A (ja) | 半導体基板の製造方法 | |
| JP3359925B2 (ja) | 半導体装置の製造方法 | |
| JPS6345002Y2 (cs) | ||
| JPS6410937B2 (cs) | ||
| JPH0336312B2 (cs) | ||
| JPH05304148A (ja) | 半導体装置の製造方法 | |
| JPH0837185A (ja) | 半導体装置の製造方法 | |
| JPS59131B2 (ja) | 半導体装置 | |
| Siddall | Paper 12: Application of Vacuum Techniques to Microelectronics | |
| JPH046090B2 (cs) | ||
| JPS63281447A (ja) | 半導体装置の製造方法 |