JPS639661B2 - - Google Patents

Info

Publication number
JPS639661B2
JPS639661B2 JP56047104A JP4710481A JPS639661B2 JP S639661 B2 JPS639661 B2 JP S639661B2 JP 56047104 A JP56047104 A JP 56047104A JP 4710481 A JP4710481 A JP 4710481A JP S639661 B2 JPS639661 B2 JP S639661B2
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
phosphorus
silicon layer
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56047104A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57167660A (en
Inventor
Minoru Inoe
Yasuhisa Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4710481A priority Critical patent/JPS57167660A/ja
Publication of JPS57167660A publication Critical patent/JPS57167660A/ja
Publication of JPS639661B2 publication Critical patent/JPS639661B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP4710481A 1981-03-30 1981-03-30 Forming method for high-melting point metallic silicide layer Granted JPS57167660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4710481A JPS57167660A (en) 1981-03-30 1981-03-30 Forming method for high-melting point metallic silicide layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4710481A JPS57167660A (en) 1981-03-30 1981-03-30 Forming method for high-melting point metallic silicide layer

Publications (2)

Publication Number Publication Date
JPS57167660A JPS57167660A (en) 1982-10-15
JPS639661B2 true JPS639661B2 (enrdf_load_stackoverflow) 1988-03-01

Family

ID=12765863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4710481A Granted JPS57167660A (en) 1981-03-30 1981-03-30 Forming method for high-melting point metallic silicide layer

Country Status (1)

Country Link
JP (1) JPS57167660A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210104054A (ko) 2018-12-18 2021-08-24 스미또모 가가꾸 가부시키가이샤 다공질층의 제조 방법, 적층체, 비수 전해액 이차 전지용 세퍼레이터 및 비수 전해액 이차 전지

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2901616B2 (ja) * 1988-06-27 1999-06-07 ソニー株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333077A (en) * 1976-09-08 1978-03-28 Nec Corp Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210104054A (ko) 2018-12-18 2021-08-24 스미또모 가가꾸 가부시키가이샤 다공질층의 제조 방법, 적층체, 비수 전해액 이차 전지용 세퍼레이터 및 비수 전해액 이차 전지

Also Published As

Publication number Publication date
JPS57167660A (en) 1982-10-15

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