JPS6138264B2 - - Google Patents
Info
- Publication number
- JPS6138264B2 JPS6138264B2 JP3638381A JP3638381A JPS6138264B2 JP S6138264 B2 JPS6138264 B2 JP S6138264B2 JP 3638381 A JP3638381 A JP 3638381A JP 3638381 A JP3638381 A JP 3638381A JP S6138264 B2 JPS6138264 B2 JP S6138264B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- melting point
- point metal
- polycrystalline silicon
- high melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Silicon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3638381A JPS57170814A (en) | 1981-03-13 | 1981-03-13 | Formation of metallic silicide layer with high melting point |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3638381A JPS57170814A (en) | 1981-03-13 | 1981-03-13 | Formation of metallic silicide layer with high melting point |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57170814A JPS57170814A (en) | 1982-10-21 |
| JPS6138264B2 true JPS6138264B2 (enrdf_load_stackoverflow) | 1986-08-28 |
Family
ID=12468316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3638381A Granted JPS57170814A (en) | 1981-03-13 | 1981-03-13 | Formation of metallic silicide layer with high melting point |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57170814A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5993871A (ja) * | 1982-11-16 | 1984-05-30 | Matsushita Electronics Corp | 高融点金属シリサイド膜の形成方法 |
| JPH02224225A (ja) * | 1988-11-28 | 1990-09-06 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP2706182B2 (ja) * | 1991-03-19 | 1998-01-28 | 三洋電機株式会社 | シリサイド膜の製造方法 |
-
1981
- 1981-03-13 JP JP3638381A patent/JPS57170814A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57170814A (en) | 1982-10-21 |
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