JPS639586B2 - - Google Patents
Info
- Publication number
- JPS639586B2 JPS639586B2 JP5235583A JP5235583A JPS639586B2 JP S639586 B2 JPS639586 B2 JP S639586B2 JP 5235583 A JP5235583 A JP 5235583A JP 5235583 A JP5235583 A JP 5235583A JP S639586 B2 JPS639586 B2 JP S639586B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- station
- vacuum chamber
- processing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 41
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 description 48
- 239000007789 gas Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 210000000078 claw Anatomy 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5235583A JPS59179786A (ja) | 1983-03-30 | 1983-03-30 | 連続スパツタ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5235583A JPS59179786A (ja) | 1983-03-30 | 1983-03-30 | 連続スパツタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59179786A JPS59179786A (ja) | 1984-10-12 |
JPS639586B2 true JPS639586B2 (xx) | 1988-02-29 |
Family
ID=12912498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5235583A Granted JPS59179786A (ja) | 1983-03-30 | 1983-03-30 | 連続スパツタ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59179786A (xx) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052574A (ja) * | 1983-09-02 | 1985-03-25 | Hitachi Ltd | 連続スパツタ装置 |
JPS60249328A (ja) * | 1984-05-25 | 1985-12-10 | Kokusai Electric Co Ltd | 半導体ウエ−ハ用ドライエツチング・化学気相生成装置 |
JPS61106768A (ja) * | 1984-10-31 | 1986-05-24 | Anelva Corp | 基体処理装置 |
JPS61108358U (xx) * | 1984-12-19 | 1986-07-09 | ||
JPS61159572A (ja) * | 1985-01-07 | 1986-07-19 | Hitachi Ltd | 連続スパツタ装置 |
JPS62234539A (ja) * | 1986-04-04 | 1987-10-14 | Hitachi Ltd | 真空処理装置 |
JPS6326357A (ja) * | 1986-07-17 | 1988-02-03 | Tokyo Electron Ltd | スパツタリング装置 |
JPS6360276A (ja) * | 1986-08-30 | 1988-03-16 | Tokyo Electron Ltd | スパツタリング装置 |
JPS63303059A (ja) * | 1987-05-30 | 1988-12-09 | Tokuda Seisakusho Ltd | 真空処理装置 |
JP3057605B2 (ja) * | 1988-01-11 | 2000-07-04 | 忠弘 大見 | 薄膜形成装置 |
US5591267A (en) * | 1988-01-11 | 1997-01-07 | Ohmi; Tadahiro | Reduced pressure device |
US5906688A (en) * | 1989-01-11 | 1999-05-25 | Ohmi; Tadahiro | Method of forming a passivation film |
US5683072A (en) * | 1988-11-01 | 1997-11-04 | Tadahiro Ohmi | Thin film forming equipment |
US5789086A (en) * | 1990-03-05 | 1998-08-04 | Ohmi; Tadahiro | Stainless steel surface having passivation film |
-
1983
- 1983-03-30 JP JP5235583A patent/JPS59179786A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59179786A (ja) | 1984-10-12 |
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