JPS63946B2 - - Google Patents

Info

Publication number
JPS63946B2
JPS63946B2 JP54055028A JP5502879A JPS63946B2 JP S63946 B2 JPS63946 B2 JP S63946B2 JP 54055028 A JP54055028 A JP 54055028A JP 5502879 A JP5502879 A JP 5502879A JP S63946 B2 JPS63946 B2 JP S63946B2
Authority
JP
Japan
Prior art keywords
etching
film
pattern
mask
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54055028A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55146933A (en
Inventor
Hiroshi Gokan
Sotaro Edokoro
Masahito Kosei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5502879A priority Critical patent/JPS55146933A/ja
Publication of JPS55146933A publication Critical patent/JPS55146933A/ja
Publication of JPS63946B2 publication Critical patent/JPS63946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP5502879A 1979-05-04 1979-05-04 Manufacturing of integrated element Granted JPS55146933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5502879A JPS55146933A (en) 1979-05-04 1979-05-04 Manufacturing of integrated element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5502879A JPS55146933A (en) 1979-05-04 1979-05-04 Manufacturing of integrated element

Publications (2)

Publication Number Publication Date
JPS55146933A JPS55146933A (en) 1980-11-15
JPS63946B2 true JPS63946B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-01-09

Family

ID=12987205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5502879A Granted JPS55146933A (en) 1979-05-04 1979-05-04 Manufacturing of integrated element

Country Status (1)

Country Link
JP (1) JPS55146933A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5224084A (en) * 1975-08-19 1977-02-23 Matsushita Electric Ind Co Ltd Semiconductor manufacturing rpocess
JPS6053460B2 (ja) * 1976-07-23 1985-11-26 日本電気株式会社 微細パタン加工法

Also Published As

Publication number Publication date
JPS55146933A (en) 1980-11-15

Similar Documents

Publication Publication Date Title
US4497684A (en) Lift-off process for depositing metal on a substrate
EP0147322B1 (en) Method for forming a pattern having a fine gap.
JPS61501738A (ja) 集積回路構造の多層メタライゼ−ションのためのダブル平面化方法
JPS63234533A (ja) ジヨセフソン接合素子の形成方法
JP3229550B2 (ja) T型ゲート電極の重畳方法およびt型低抵抗金属の重畳方法
JPS63946B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3932345B2 (ja) 象嵌技法を利用した微細金属パターン形成方法
EP1071122B1 (fr) Procédé de correction des effets topographiques sur substrat en micro electronique
JPH09511875A (ja) 絶縁層上にメタライゼーション層を設け同一マスクを使用して貫通孔を開ける方法
EP0022580A1 (en) Advantageous fabrication technique for devices relying on magnetic properties
JP2887878B2 (ja) レジストパターンの保護膜の形成方法
JPH0532915B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2985204B2 (ja) 半導体装置の製造方法
JPS628030B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0121617B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR960013140B1 (ko) 반도체 소자의 제조 방법
JPH0423322A (ja) 半導体装置の製造方法
JP2997794B2 (ja) コンタクトホールの形成方法
JPS6052043A (ja) 配線構造の製造方法
KR100248345B1 (ko) 반도체 소자의 금속 배선 형성 방법
JPH023926A (ja) 配線の形成方法
JPH01236658A (ja) 半導体装置の製造方法
JPH0670997B2 (ja) 半導体装置の製造方法
JPH01125996A (ja) パターン形成方法
JPS6258677B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)