JPS639387B2 - - Google Patents
Info
- Publication number
- JPS639387B2 JPS639387B2 JP53101790A JP10179078A JPS639387B2 JP S639387 B2 JPS639387 B2 JP S639387B2 JP 53101790 A JP53101790 A JP 53101790A JP 10179078 A JP10179078 A JP 10179078A JP S639387 B2 JPS639387 B2 JP S639387B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- main surface
- bipolar transistor
- bimosic
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 40
- 229910052698 phosphorus Inorganic materials 0.000 claims description 39
- 239000011574 phosphorus Substances 0.000 claims description 39
- 239000011521 glass Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10179078A JPS5529115A (en) | 1978-08-23 | 1978-08-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10179078A JPS5529115A (en) | 1978-08-23 | 1978-08-23 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5529115A JPS5529115A (en) | 1980-03-01 |
| JPS639387B2 true JPS639387B2 (enrdf_load_stackoverflow) | 1988-02-29 |
Family
ID=14309954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10179078A Granted JPS5529115A (en) | 1978-08-23 | 1978-08-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5529115A (enrdf_load_stackoverflow) |
-
1978
- 1978-08-23 JP JP10179078A patent/JPS5529115A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5529115A (en) | 1980-03-01 |
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