JPS6146984B2 - - Google Patents

Info

Publication number
JPS6146984B2
JPS6146984B2 JP52042258A JP4225877A JPS6146984B2 JP S6146984 B2 JPS6146984 B2 JP S6146984B2 JP 52042258 A JP52042258 A JP 52042258A JP 4225877 A JP4225877 A JP 4225877A JP S6146984 B2 JPS6146984 B2 JP S6146984B2
Authority
JP
Japan
Prior art keywords
source
drain
substrate
mask layer
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52042258A
Other languages
English (en)
Japanese (ja)
Other versions
JPS53127273A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4225877A priority Critical patent/JPS53127273A/ja
Publication of JPS53127273A publication Critical patent/JPS53127273A/ja
Publication of JPS6146984B2 publication Critical patent/JPS6146984B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Drying Of Semiconductors (AREA)
JP4225877A 1977-04-13 1977-04-13 Mis transistor and its manufacture Granted JPS53127273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4225877A JPS53127273A (en) 1977-04-13 1977-04-13 Mis transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4225877A JPS53127273A (en) 1977-04-13 1977-04-13 Mis transistor and its manufacture

Publications (2)

Publication Number Publication Date
JPS53127273A JPS53127273A (en) 1978-11-07
JPS6146984B2 true JPS6146984B2 (enrdf_load_stackoverflow) 1986-10-16

Family

ID=12630997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4225877A Granted JPS53127273A (en) 1977-04-13 1977-04-13 Mis transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS53127273A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710617U (enrdf_load_stackoverflow) * 1980-06-11 1982-01-20
JPH0254537A (ja) * 1988-08-18 1990-02-23 Seiko Epson Corp 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPS53127273A (en) 1978-11-07

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