JPS639383B2 - - Google Patents

Info

Publication number
JPS639383B2
JPS639383B2 JP54076568A JP7656879A JPS639383B2 JP S639383 B2 JPS639383 B2 JP S639383B2 JP 54076568 A JP54076568 A JP 54076568A JP 7656879 A JP7656879 A JP 7656879A JP S639383 B2 JPS639383 B2 JP S639383B2
Authority
JP
Japan
Prior art keywords
region
gate electrode
conductivity type
type
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54076568A
Other languages
English (en)
Japanese (ja)
Other versions
JPS561558A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7656879A priority Critical patent/JPS561558A/ja
Priority to US06/159,505 priority patent/US4455566A/en
Priority to EP80302038A priority patent/EP0021776B1/en
Priority to DE8080302038T priority patent/DE3062608D1/de
Publication of JPS561558A publication Critical patent/JPS561558A/ja
Publication of JPS639383B2 publication Critical patent/JPS639383B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP7656879A 1979-06-18 1979-06-18 Dynamic memory cell Granted JPS561558A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7656879A JPS561558A (en) 1979-06-18 1979-06-18 Dynamic memory cell
US06/159,505 US4455566A (en) 1979-06-18 1980-06-16 Highly integrated semiconductor memory device
EP80302038A EP0021776B1 (en) 1979-06-18 1980-06-17 Semiconductor memory device and method of making same
DE8080302038T DE3062608D1 (en) 1979-06-18 1980-06-17 Semiconductor memory device and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7656879A JPS561558A (en) 1979-06-18 1979-06-18 Dynamic memory cell

Publications (2)

Publication Number Publication Date
JPS561558A JPS561558A (en) 1981-01-09
JPS639383B2 true JPS639383B2 (enrdf_load_stackoverflow) 1988-02-29

Family

ID=13608828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7656879A Granted JPS561558A (en) 1979-06-18 1979-06-18 Dynamic memory cell

Country Status (1)

Country Link
JP (1) JPS561558A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162458A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor device
JPH0612805B2 (ja) * 1983-03-31 1994-02-16 富士通株式会社 半導体記憶装置の製造方法
JPS59212472A (ja) * 1983-05-16 1984-12-01 Sumitomo Chem Co Ltd ４，５，６，７−テトラヒドロ−２ｈ−イソインド−ル−１，３−ジオン誘導体、その製造法およびそれを有効成分とする除草剤
JPS60161600A (ja) * 1984-02-01 1985-08-23 株式会社日立製作所 原子力発電所用防護具等のドライクリ−ニング装置

Also Published As

Publication number Publication date
JPS561558A (en) 1981-01-09

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