JPS561558A - Dynamic memory cell - Google Patents
Dynamic memory cellInfo
- Publication number
- JPS561558A JPS561558A JP7656879A JP7656879A JPS561558A JP S561558 A JPS561558 A JP S561558A JP 7656879 A JP7656879 A JP 7656879A JP 7656879 A JP7656879 A JP 7656879A JP S561558 A JPS561558 A JP S561558A
- Authority
- JP
- Japan
- Prior art keywords
- type
- gate electrode
- layer
- gate
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7656879A JPS561558A (en) | 1979-06-18 | 1979-06-18 | Dynamic memory cell |
| US06/159,505 US4455566A (en) | 1979-06-18 | 1980-06-16 | Highly integrated semiconductor memory device |
| EP80302038A EP0021776B1 (en) | 1979-06-18 | 1980-06-17 | Semiconductor memory device and method of making same |
| DE8080302038T DE3062608D1 (en) | 1979-06-18 | 1980-06-17 | Semiconductor memory device and method of making same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7656879A JPS561558A (en) | 1979-06-18 | 1979-06-18 | Dynamic memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS561558A true JPS561558A (en) | 1981-01-09 |
| JPS639383B2 JPS639383B2 (enrdf_load_stackoverflow) | 1988-02-29 |
Family
ID=13608828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7656879A Granted JPS561558A (en) | 1979-06-18 | 1979-06-18 | Dynamic memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561558A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162458A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor device |
| JPS59181661A (ja) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | 半導体記憶装置 |
| JPS59212472A (ja) * | 1983-05-16 | 1984-12-01 | Sumitomo Chem Co Ltd | 4,5,6,7−テトラヒドロ−2h−イソインド−ル−1,3−ジオン誘導体、その製造法およびそれを有効成分とする除草剤 |
| JPS60161600A (ja) * | 1984-02-01 | 1985-08-23 | 株式会社日立製作所 | 原子力発電所用防護具等のドライクリ−ニング装置 |
-
1979
- 1979-06-18 JP JP7656879A patent/JPS561558A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162458A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor device |
| JPS59181661A (ja) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | 半導体記憶装置 |
| JPS59212472A (ja) * | 1983-05-16 | 1984-12-01 | Sumitomo Chem Co Ltd | 4,5,6,7−テトラヒドロ−2h−イソインド−ル−1,3−ジオン誘導体、その製造法およびそれを有効成分とする除草剤 |
| JPS60161600A (ja) * | 1984-02-01 | 1985-08-23 | 株式会社日立製作所 | 原子力発電所用防護具等のドライクリ−ニング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639383B2 (enrdf_load_stackoverflow) | 1988-02-29 |
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