JPS564270A - Memory cell - Google Patents

Memory cell

Info

Publication number
JPS564270A
JPS564270A JP7989379A JP7989379A JPS564270A JP S564270 A JPS564270 A JP S564270A JP 7989379 A JP7989379 A JP 7989379A JP 7989379 A JP7989379 A JP 7989379A JP S564270 A JPS564270 A JP S564270A
Authority
JP
Japan
Prior art keywords
memory cell
increase
substrate
electrode
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7989379A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Shinichi Sato
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7989379A priority Critical patent/JPS564270A/en
Publication of JPS564270A publication Critical patent/JPS564270A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Abstract

PURPOSE:To increase the capacitance of a memory cell to provide an allowance in memory operation of te memory cell by forming a groove-like or hole-like recess on an Si substrate becoming one electrode of a capacitor forming a MOS memory to increase the area of the electrode. CONSTITUTION:An N<+>-type region 5 is diffused in a P-type Si substrate 1, and the first and second polycrystalline Si gates 2 and 3 are formed as buried in an insulating film on a channel region 4 to form a MOS dynamic RAM. In order to increase the contact area between the first gate 2 and the substrate 1 in this configuration, a crystalline plate (100) is used for the substrate 1 to be anisotropically etched with a mixture solution of hydrazine, isopropyl alcohol and water to form a groove- like or hole-like etching pattern 7 on the memory cell. In this manner, the area of the capacitor electrode is increased to increase the capacitance of the memory cell.
JP7989379A 1979-06-22 1979-06-22 Memory cell Pending JPS564270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7989379A JPS564270A (en) 1979-06-22 1979-06-22 Memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7989379A JPS564270A (en) 1979-06-22 1979-06-22 Memory cell

Publications (1)

Publication Number Publication Date
JPS564270A true JPS564270A (en) 1981-01-17

Family

ID=13702942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7989379A Pending JPS564270A (en) 1979-06-22 1979-06-22 Memory cell

Country Status (1)

Country Link
JP (1) JPS564270A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6015893U (en) * 1983-07-12 1985-02-02 三菱重工業株式会社 screw feeder
US4515909A (en) * 1982-02-16 1985-05-07 Kiyohito Sawano Resinous composition for the prolonged release of fragrant substances

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4515909A (en) * 1982-02-16 1985-05-07 Kiyohito Sawano Resinous composition for the prolonged release of fragrant substances
JPS6015893U (en) * 1983-07-12 1985-02-02 三菱重工業株式会社 screw feeder

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