JPS6381426A - フオトマスクブランクとフオトマスク - Google Patents
フオトマスクブランクとフオトマスクInfo
- Publication number
- JPS6381426A JPS6381426A JP61229330A JP22933086A JPS6381426A JP S6381426 A JPS6381426 A JP S6381426A JP 61229330 A JP61229330 A JP 61229330A JP 22933086 A JP22933086 A JP 22933086A JP S6381426 A JPS6381426 A JP S6381426A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- see
- chromium
- photomask
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 25
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 18
- 239000011651 chromium Substances 0.000 claims abstract description 18
- 229910021563 chromium fluoride Inorganic materials 0.000 claims description 17
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 claims description 17
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 14
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 14
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- -1 oxide Chemical compound 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 28
- 238000002834 transmittance Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61229330A JPS6381426A (ja) | 1986-09-26 | 1986-09-26 | フオトマスクブランクとフオトマスク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61229330A JPS6381426A (ja) | 1986-09-26 | 1986-09-26 | フオトマスクブランクとフオトマスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6381426A true JPS6381426A (ja) | 1988-04-12 |
| JPH0515252B2 JPH0515252B2 (enrdf_load_stackoverflow) | 1993-03-01 |
Family
ID=16890458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61229330A Granted JPS6381426A (ja) | 1986-09-26 | 1986-09-26 | フオトマスクブランクとフオトマスク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6381426A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0643331A3 (en) * | 1993-08-17 | 1996-09-18 | Mitsubishi Electric Corp | Halftone phase shift photomask, blank halftone phase shift mask, and method of making the blank mask. |
| GB2306699A (en) * | 1995-10-25 | 1997-05-07 | Hyundai Electronics Ind | Phase shifting mask |
| KR20020091632A (ko) * | 2001-05-31 | 2002-12-06 | 엘지.필립스 엘시디 주식회사 | 슬릿형 포토 마스크 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54120002A (en) * | 1978-03-09 | 1979-09-18 | Tokyo Shibaura Electric Co | Photoetching mask |
| JPS55121441A (en) * | 1979-03-14 | 1980-09-18 | Fujitsu Ltd | Mask for far ultraviolet exposure |
-
1986
- 1986-09-26 JP JP61229330A patent/JPS6381426A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54120002A (en) * | 1978-03-09 | 1979-09-18 | Tokyo Shibaura Electric Co | Photoetching mask |
| JPS55121441A (en) * | 1979-03-14 | 1980-09-18 | Fujitsu Ltd | Mask for far ultraviolet exposure |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0643331A3 (en) * | 1993-08-17 | 1996-09-18 | Mitsubishi Electric Corp | Halftone phase shift photomask, blank halftone phase shift mask, and method of making the blank mask. |
| US5738959A (en) * | 1993-08-17 | 1998-04-14 | Dai Nippon Printing Co., Ltd. | Halftone phase shift photomask, halftone phase shift photomask blank, and method of producing the same comprising fluorine in phase shift layer |
| US5916712A (en) * | 1993-08-17 | 1999-06-29 | Dai Nippon Printing Co., Ltd. | Halftone phase shift photomask, halftone phase shift photomask blank, and method of producing the same |
| KR100311704B1 (ko) * | 1993-08-17 | 2001-12-15 | 기타오카 다카시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및그블랭크스의제조방법 |
| GB2306699A (en) * | 1995-10-25 | 1997-05-07 | Hyundai Electronics Ind | Phase shifting mask |
| KR20020091632A (ko) * | 2001-05-31 | 2002-12-06 | 엘지.필립스 엘시디 주식회사 | 슬릿형 포토 마스크 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0515252B2 (enrdf_load_stackoverflow) | 1993-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |