JPS637649A - 半導体素子の電極構造 - Google Patents
半導体素子の電極構造Info
- Publication number
- JPS637649A JPS637649A JP61152388A JP15238886A JPS637649A JP S637649 A JPS637649 A JP S637649A JP 61152388 A JP61152388 A JP 61152388A JP 15238886 A JP15238886 A JP 15238886A JP S637649 A JPS637649 A JP S637649A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- insulating film
- film
- electrode structure
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical group [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 1
- 230000002787 reinforcement Effects 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61152388A JPS637649A (ja) | 1986-06-28 | 1986-06-28 | 半導体素子の電極構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61152388A JPS637649A (ja) | 1986-06-28 | 1986-06-28 | 半導体素子の電極構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS637649A true JPS637649A (ja) | 1988-01-13 |
| JPH0582969B2 JPH0582969B2 (enrdf_load_stackoverflow) | 1993-11-24 |
Family
ID=15539424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61152388A Granted JPS637649A (ja) | 1986-06-28 | 1986-06-28 | 半導体素子の電極構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS637649A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010177248A (ja) * | 2009-01-27 | 2010-08-12 | Anritsu Corp | 半導体装置及びその製造方法 |
-
1986
- 1986-06-28 JP JP61152388A patent/JPS637649A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010177248A (ja) * | 2009-01-27 | 2010-08-12 | Anritsu Corp | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582969B2 (enrdf_load_stackoverflow) | 1993-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |