JPS637471B2 - - Google Patents

Info

Publication number
JPS637471B2
JPS637471B2 JP56203586A JP20358681A JPS637471B2 JP S637471 B2 JPS637471 B2 JP S637471B2 JP 56203586 A JP56203586 A JP 56203586A JP 20358681 A JP20358681 A JP 20358681A JP S637471 B2 JPS637471 B2 JP S637471B2
Authority
JP
Japan
Prior art keywords
semiconductor region
type
conductivity type
thyristor
zero
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56203586A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58105572A (ja
Inventor
Takami Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP56203586A priority Critical patent/JPS58105572A/ja
Publication of JPS58105572A publication Critical patent/JPS58105572A/ja
Publication of JPS637471B2 publication Critical patent/JPS637471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP56203586A 1981-12-18 1981-12-18 ゼロクロス光サイリスタ Granted JPS58105572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56203586A JPS58105572A (ja) 1981-12-18 1981-12-18 ゼロクロス光サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56203586A JPS58105572A (ja) 1981-12-18 1981-12-18 ゼロクロス光サイリスタ

Publications (2)

Publication Number Publication Date
JPS58105572A JPS58105572A (ja) 1983-06-23
JPS637471B2 true JPS637471B2 (enrdf_load_stackoverflow) 1988-02-17

Family

ID=16476532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56203586A Granted JPS58105572A (ja) 1981-12-18 1981-12-18 ゼロクロス光サイリスタ

Country Status (1)

Country Link
JP (1) JPS58105572A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4105646A1 (de) * 1990-02-23 1991-08-29 Matsushita Electric Works Ltd Verfahren zum herstellen eines optisch getriggerten lateralen thyristors

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035571A (ja) * 1983-08-08 1985-02-23 Sanken Electric Co Ltd 半導体装置
JPS6074678A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 半導体装置
JPH0697692B2 (ja) * 1984-01-17 1994-11-30 株式会社東芝 半導体装置
JPS63124477A (ja) * 1986-11-12 1988-05-27 Mitsubishi Electric Corp ゼロクロス機能付光結合素子
JPH02126677A (ja) * 1988-11-07 1990-05-15 Toshiba Corp 半導体装置
JPH04249370A (ja) * 1991-02-05 1992-09-04 Sharp Corp フォトトライアック
CN108288656B (zh) * 2018-03-08 2020-03-31 电子科技大学 高di/dt耐量光控晶闸管
CN108493291B (zh) * 2018-04-13 2020-03-31 电子科技大学 高di/dt光控晶闸管版图设计方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146190A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode circuit
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
JPS553694A (en) * 1978-06-16 1980-01-11 Motorola Inc Device for triggering monolithic semiconductor
JPS5477584A (en) * 1978-11-13 1979-06-21 Hitachi Ltd Semiconductor switch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4105646A1 (de) * 1990-02-23 1991-08-29 Matsushita Electric Works Ltd Verfahren zum herstellen eines optisch getriggerten lateralen thyristors
DE4105646C2 (de) * 1990-02-23 1994-07-28 Matsushita Electric Works Ltd Verfahren zum Herstellen eines optisch triggerbaren lateralen Thyristors

Also Published As

Publication number Publication date
JPS58105572A (ja) 1983-06-23

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