JPH029463B2 - - Google Patents

Info

Publication number
JPH029463B2
JPH029463B2 JP58144629A JP14462983A JPH029463B2 JP H029463 B2 JPH029463 B2 JP H029463B2 JP 58144629 A JP58144629 A JP 58144629A JP 14462983 A JP14462983 A JP 14462983A JP H029463 B2 JPH029463 B2 JP H029463B2
Authority
JP
Japan
Prior art keywords
semiconductor region
semiconductor
type
voltage
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58144629A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6035571A (ja
Inventor
Tooru Suzuki
Takami Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP58144629A priority Critical patent/JPS6035571A/ja
Publication of JPS6035571A publication Critical patent/JPS6035571A/ja
Publication of JPH029463B2 publication Critical patent/JPH029463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP58144629A 1983-08-08 1983-08-08 半導体装置 Granted JPS6035571A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58144629A JPS6035571A (ja) 1983-08-08 1983-08-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58144629A JPS6035571A (ja) 1983-08-08 1983-08-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS6035571A JPS6035571A (ja) 1985-02-23
JPH029463B2 true JPH029463B2 (enrdf_load_stackoverflow) 1990-03-02

Family

ID=15366484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58144629A Granted JPS6035571A (ja) 1983-08-08 1983-08-08 半導体装置

Country Status (1)

Country Link
JP (1) JPS6035571A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62122272A (ja) * 1985-11-22 1987-06-03 Toshiba Corp 半導体装置
JPH02126677A (ja) * 1988-11-07 1990-05-15 Toshiba Corp 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ

Also Published As

Publication number Publication date
JPS6035571A (ja) 1985-02-23

Similar Documents

Publication Publication Date Title
US4414560A (en) Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
US4975755A (en) Optically controllable static induction thyristor device
US4016593A (en) Bidirectional photothyristor device
JPH0575110A (ja) 半導体装置
US5099300A (en) Gated base controlled thyristor
US4641175A (en) Bidirectional power switch with optimized emitter spacing near control electrode
US5936267A (en) Insulated gate thyristor
JPH0117268B2 (enrdf_load_stackoverflow)
JP2946750B2 (ja) 半導体装置
CA1145059A (en) Light-firable thyristor
JP3257394B2 (ja) 電圧駆動型半導体装置
JPH05110067A (ja) ターンオフｍｏｓ制御パワー半導体素子
JPS637471B2 (enrdf_load_stackoverflow)
JPH0154865B2 (enrdf_load_stackoverflow)
JPH029463B2 (enrdf_load_stackoverflow)
JP2513665B2 (ja) 絶縁ゲ−ト型サイリスタ
US4419683A (en) Thyristor having a controllable emitter short circuit
JP3297087B2 (ja) 高耐圧半導体装置
US4825270A (en) Gate turn-off thyristor
JPS623987B2 (enrdf_load_stackoverflow)
US3504241A (en) Semiconductor bidirectional switch
JPH01251755A (ja) サイリスタ
JPH02294073A (ja) 大阻止容量半導体素子
JPS62144357A (ja) スイツチング用半導体装置
KR100486350B1 (ko) 에미터스위치사이리스터및이의제조방법