JPS6035571A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS6035571A JPS6035571A JP58144629A JP14462983A JPS6035571A JP S6035571 A JPS6035571 A JP S6035571A JP 58144629 A JP58144629 A JP 58144629A JP 14462983 A JP14462983 A JP 14462983A JP S6035571 A JPS6035571 A JP S6035571A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- voltage
- gate
- semiconductor
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
Landscapes
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58144629A JPS6035571A (ja) | 1983-08-08 | 1983-08-08 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58144629A JPS6035571A (ja) | 1983-08-08 | 1983-08-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6035571A true JPS6035571A (ja) | 1985-02-23 |
JPH029463B2 JPH029463B2 (enrdf_load_stackoverflow) | 1990-03-02 |
Family
ID=15366484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58144629A Granted JPS6035571A (ja) | 1983-08-08 | 1983-08-08 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6035571A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4943835A (en) * | 1985-11-22 | 1990-07-24 | Kabushiki Kaisha Toshiba | Semiconductor device including protecting MOS transistor |
US5138415A (en) * | 1988-11-07 | 1992-08-11 | Kabushiki Kaisha Toshiba | Photo-semiconductor device with a zero-cross function |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58105572A (ja) * | 1981-12-18 | 1983-06-23 | Sanken Electric Co Ltd | ゼロクロス光サイリスタ |
-
1983
- 1983-08-08 JP JP58144629A patent/JPS6035571A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58105572A (ja) * | 1981-12-18 | 1983-06-23 | Sanken Electric Co Ltd | ゼロクロス光サイリスタ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4943835A (en) * | 1985-11-22 | 1990-07-24 | Kabushiki Kaisha Toshiba | Semiconductor device including protecting MOS transistor |
US5138415A (en) * | 1988-11-07 | 1992-08-11 | Kabushiki Kaisha Toshiba | Photo-semiconductor device with a zero-cross function |
Also Published As
Publication number | Publication date |
---|---|
JPH029463B2 (enrdf_load_stackoverflow) | 1990-03-02 |
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