JPS637470B2 - - Google Patents
Info
- Publication number
- JPS637470B2 JPS637470B2 JP55176236A JP17623680A JPS637470B2 JP S637470 B2 JPS637470 B2 JP S637470B2 JP 55176236 A JP55176236 A JP 55176236A JP 17623680 A JP17623680 A JP 17623680A JP S637470 B2 JPS637470 B2 JP S637470B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- collector
- base
- emitter
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55176236A JPS5799769A (en) | 1980-12-13 | 1980-12-13 | Composite transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55176236A JPS5799769A (en) | 1980-12-13 | 1980-12-13 | Composite transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5799769A JPS5799769A (en) | 1982-06-21 |
| JPS637470B2 true JPS637470B2 (enrdf_load_stackoverflow) | 1988-02-17 |
Family
ID=16010011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55176236A Granted JPS5799769A (en) | 1980-12-13 | 1980-12-13 | Composite transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5799769A (enrdf_load_stackoverflow) |
-
1980
- 1980-12-13 JP JP55176236A patent/JPS5799769A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5799769A (en) | 1982-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0732196B2 (ja) | モノリシツク集積電力半導体装置 | |
| JP2002064106A (ja) | 半導体装置 | |
| US3969747A (en) | Complementary bipolar transistors with IIL type common base drivers | |
| JPH06104459A (ja) | 半導体装置 | |
| JPH0797553B2 (ja) | Ｎｐｎトランジスタ−の固有降伏電圧より大きい降伏電圧を有するｎｐｎ等価構造 | |
| JPS637470B2 (enrdf_load_stackoverflow) | ||
| JPS5937866B2 (ja) | 半導体装置 | |
| JP2953623B2 (ja) | プレーナ型サイリスタ | |
| JP2665820B2 (ja) | ラテラルトランジスタ | |
| JPS6022504B2 (ja) | 半導体装置の製造方法 | |
| JPH0715134Y2 (ja) | 半導体装置 | |
| JPS648924B2 (enrdf_load_stackoverflow) | ||
| JPS6364058B2 (enrdf_load_stackoverflow) | ||
| JPS5833707Y2 (ja) | トランジスタ回路装置 | |
| JPS59168663A (ja) | 半導体集積回路 | |
| JPH0117266B2 (enrdf_load_stackoverflow) | ||
| JP2650405B2 (ja) | バイポーラトランジスタ | |
| JPS61150383A (ja) | 半導体装置 | |
| JPH0412031B2 (enrdf_load_stackoverflow) | ||
| JPS6348189B2 (enrdf_load_stackoverflow) | ||
| JPS63107162A (ja) | 縦型ｐｎｐトランジスタ | |
| JPS6329835B2 (enrdf_load_stackoverflow) | ||
| JPS6132823B2 (enrdf_load_stackoverflow) | ||
| JPH0241171B2 (enrdf_load_stackoverflow) | ||
| JPS61229363A (ja) | ゲ−トタ−ンオフサイリスタ |