JPS6348189B2 - - Google Patents
Info
- Publication number
- JPS6348189B2 JPS6348189B2 JP55109527A JP10952780A JPS6348189B2 JP S6348189 B2 JPS6348189 B2 JP S6348189B2 JP 55109527 A JP55109527 A JP 55109527A JP 10952780 A JP10952780 A JP 10952780A JP S6348189 B2 JPS6348189 B2 JP S6348189B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- semiconductor
- power transistor
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10952780A JPS5734357A (en) | 1980-08-09 | 1980-08-09 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10952780A JPS5734357A (en) | 1980-08-09 | 1980-08-09 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5734357A JPS5734357A (en) | 1982-02-24 |
JPS6348189B2 true JPS6348189B2 (enrdf_load_stackoverflow) | 1988-09-28 |
Family
ID=14512513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10952780A Granted JPS5734357A (en) | 1980-08-09 | 1980-08-09 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5734357A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1214808B (it) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli |
IT1252102B (it) * | 1991-11-26 | 1995-06-02 | Cons Ric Microelettronica | Dispositivo monolitico a semiconduttore a struttura verticale con transistore di potenza a base profonda e emettitore a dita avente resistenze di ballast |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50141979A (enrdf_load_stackoverflow) * | 1974-05-01 | 1975-11-15 | ||
JPS5570063A (en) * | 1978-11-22 | 1980-05-27 | Hitachi Ltd | Transistor and its preparation |
-
1980
- 1980-08-09 JP JP10952780A patent/JPS5734357A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5734357A (en) | 1982-02-24 |
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