JPH0425706B2 - - Google Patents

Info

Publication number
JPH0425706B2
JPH0425706B2 JP58068534A JP6853483A JPH0425706B2 JP H0425706 B2 JPH0425706 B2 JP H0425706B2 JP 58068534 A JP58068534 A JP 58068534A JP 6853483 A JP6853483 A JP 6853483A JP H0425706 B2 JPH0425706 B2 JP H0425706B2
Authority
JP
Japan
Prior art keywords
type
region
forming
collector
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58068534A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59194465A (ja
Inventor
Masaru Yoneda
Masaharu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP58068534A priority Critical patent/JPS59194465A/ja
Publication of JPS59194465A publication Critical patent/JPS59194465A/ja
Priority to JP2417705A priority patent/JPH03245562A/ja
Publication of JPH0425706B2 publication Critical patent/JPH0425706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58068534A 1983-04-19 1983-04-19 半導体集積回路の製造方法 Granted JPS59194465A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58068534A JPS59194465A (ja) 1983-04-19 1983-04-19 半導体集積回路の製造方法
JP2417705A JPH03245562A (ja) 1983-04-19 1990-12-14 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58068534A JPS59194465A (ja) 1983-04-19 1983-04-19 半導体集積回路の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2417705A Division JPH03245562A (ja) 1983-04-19 1990-12-14 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS59194465A JPS59194465A (ja) 1984-11-05
JPH0425706B2 true JPH0425706B2 (enrdf_load_stackoverflow) 1992-05-01

Family

ID=13376494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58068534A Granted JPS59194465A (ja) 1983-04-19 1983-04-19 半導体集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS59194465A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0618203B2 (ja) * 1986-03-14 1994-03-09 三洋電機株式会社 縦型ｐｎｐトランジスタの製造方法
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
JPH0276843U (enrdf_load_stackoverflow) * 1988-12-01 1990-06-13
WO1996032778A2 (en) * 1995-04-10 1996-10-17 Philips Electronics N.V. Level-shifting circuit and high-side driver including such a level-shifting circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252374A (en) * 1976-06-21 1977-04-27 Sony Corp Semiconductor device

Also Published As

Publication number Publication date
JPS59194465A (ja) 1984-11-05

Similar Documents

Publication Publication Date Title
JP3202785B2 (ja) モノリシック半導体装置及びその製造方法
JP3306273B2 (ja) 半導体集積回路とその製造方法
JP2700180B2 (ja) ｐｎｐ型の縦型孤立コレクタトランジスタ
US4564855A (en) High current PNP transistor forming part of an integrated monolithic circuit
JPH0425706B2 (enrdf_load_stackoverflow)
WO1984001053A1 (fr) Dispositif a semiconducteurs
US4144106A (en) Manufacture of an I2 device utilizing staged selective diffusion thru a polycrystalline mask
JPS6133261B2 (enrdf_load_stackoverflow)
JPH0472390B2 (enrdf_load_stackoverflow)
JPH02114645A (ja) バイポーラトランジスタ
JPS6140140B2 (enrdf_load_stackoverflow)
JPS6060753A (ja) 半導体装置
JP2729059B2 (ja) 半導体装置
JPH02251174A (ja) 半導体装置
JPS6348189B2 (enrdf_load_stackoverflow)
JP3343892B2 (ja) 半導体集積回路
JP2783888B2 (ja) 半導体装置およびその製造方法
JP2927843B2 (ja) 半導体集積回路
JP2932076B2 (ja) 半導体装置の製造方法
JP2723566B2 (ja) 半導体装置
JPS58107645A (ja) 半導体装置の製法
JPS6252466B2 (enrdf_load_stackoverflow)
JPH0629374A (ja) 半導体集積回路装置
JPS6031105B2 (ja) 半導体装置
JPH02276271A (ja) バイポーラ・ｃｍｏｓ半導体装置及びその製造方法