JPS59194465A - 半導体集積回路の製造方法 - Google Patents
半導体集積回路の製造方法Info
- Publication number
- JPS59194465A JPS59194465A JP58068534A JP6853483A JPS59194465A JP S59194465 A JPS59194465 A JP S59194465A JP 58068534 A JP58068534 A JP 58068534A JP 6853483 A JP6853483 A JP 6853483A JP S59194465 A JPS59194465 A JP S59194465A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- collector
- transistor
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims description 33
- 238000002955 isolation Methods 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 1
- NBJBFKVCPBJQMR-APKOLTMOSA-N nff 1 Chemical compound C([C@H](NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H]1CCCN1C(=O)[C@H](CCCCN)NC(=O)[C@@H]1CCCN1C(=O)CC=1C2=CC=C(C=C2OC(=O)C=1)OC)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCCNC=1C(=CC(=CC=1)[N+]([O-])=O)[N+]([O-])=O)C(=O)NCC(O)=O)C1=CC=CC=C1 NBJBFKVCPBJQMR-APKOLTMOSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58068534A JPS59194465A (ja) | 1983-04-19 | 1983-04-19 | 半導体集積回路の製造方法 |
| JP2417705A JPH03245562A (ja) | 1983-04-19 | 1990-12-14 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58068534A JPS59194465A (ja) | 1983-04-19 | 1983-04-19 | 半導体集積回路の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2417705A Division JPH03245562A (ja) | 1983-04-19 | 1990-12-14 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59194465A true JPS59194465A (ja) | 1984-11-05 |
| JPH0425706B2 JPH0425706B2 (enrdf_load_stackoverflow) | 1992-05-01 |
Family
ID=13376494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58068534A Granted JPS59194465A (ja) | 1983-04-19 | 1983-04-19 | 半導体集積回路の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59194465A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62214662A (ja) * | 1986-03-14 | 1987-09-21 | Sanyo Electric Co Ltd | 縦型ｐｎｐトランジスタの製造方法 |
| US4898836A (en) * | 1988-04-28 | 1990-02-06 | Sgs-Thomson Microelectronics S.R.L. | Process for forming an integrated circuit on an N type substrate comprising PNP and NPN transistors placed vertically and insulated one from another |
| JPH0276843U (enrdf_load_stackoverflow) * | 1988-12-01 | 1990-06-13 | ||
| EP0764365A2 (en) * | 1995-04-10 | 1997-03-26 | Koninklijke Philips Electronics N.V. | Level-shifting circuit and high-side driver including such a level-shifting circuit |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5252374A (en) * | 1976-06-21 | 1977-04-27 | Sony Corp | Semiconductor device |
-
1983
- 1983-04-19 JP JP58068534A patent/JPS59194465A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5252374A (en) * | 1976-06-21 | 1977-04-27 | Sony Corp | Semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62214662A (ja) * | 1986-03-14 | 1987-09-21 | Sanyo Electric Co Ltd | 縦型ｐｎｐトランジスタの製造方法 |
| US4898836A (en) * | 1988-04-28 | 1990-02-06 | Sgs-Thomson Microelectronics S.R.L. | Process for forming an integrated circuit on an N type substrate comprising PNP and NPN transistors placed vertically and insulated one from another |
| JPH0276843U (enrdf_load_stackoverflow) * | 1988-12-01 | 1990-06-13 | ||
| EP0764365A2 (en) * | 1995-04-10 | 1997-03-26 | Koninklijke Philips Electronics N.V. | Level-shifting circuit and high-side driver including such a level-shifting circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0425706B2 (enrdf_load_stackoverflow) | 1992-05-01 |
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