JPH0424866B2 - - Google Patents

Info

Publication number
JPH0424866B2
JPH0424866B2 JP56142024A JP14202481A JPH0424866B2 JP H0424866 B2 JPH0424866 B2 JP H0424866B2 JP 56142024 A JP56142024 A JP 56142024A JP 14202481 A JP14202481 A JP 14202481A JP H0424866 B2 JPH0424866 B2 JP H0424866B2
Authority
JP
Japan
Prior art keywords
region
semiconductor
semiconductor region
base
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56142024A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5848958A (ja
Inventor
Masaharu Tanaka
Masaru Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP56142024A priority Critical patent/JPS5848958A/ja
Publication of JPS5848958A publication Critical patent/JPS5848958A/ja
Publication of JPH0424866B2 publication Critical patent/JPH0424866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10Integrated device layouts

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56142024A 1981-09-09 1981-09-09 半導体装置の製造方法 Granted JPS5848958A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56142024A JPS5848958A (ja) 1981-09-09 1981-09-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56142024A JPS5848958A (ja) 1981-09-09 1981-09-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5848958A JPS5848958A (ja) 1983-03-23
JPH0424866B2 true JPH0424866B2 (enrdf_load_stackoverflow) 1992-04-28

Family

ID=15305587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56142024A Granted JPS5848958A (ja) 1981-09-09 1981-09-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5848958A (enrdf_load_stackoverflow)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141979A (enrdf_load_stackoverflow) * 1974-05-01 1975-11-15
JPS50142181A (enrdf_load_stackoverflow) * 1974-05-07 1975-11-15
JPS5298485A (en) * 1976-02-13 1977-08-18 Sony Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS5848958A (ja) 1983-03-23

Similar Documents

Publication Publication Date Title
JPS6392058A (ja) モノリシック高電圧半導体デバイスの製造方法
JPH022664A (ja) 半導体装置およびその製造方法
JPS6322070B2 (enrdf_load_stackoverflow)
US4051506A (en) Complementary semiconductor device
US4430793A (en) Method of manufacturing a semiconductor device utilizing selective introduction of a dopant thru a deposited semiconductor contact layer
JPH0216017B2 (enrdf_load_stackoverflow)
US5218227A (en) Semiconductor device and method of manufacturing same
US4512074A (en) Method for manufacturing a semiconductor device utilizing selective oxidation and diffusion from a polycrystalline source
US3959039A (en) Method of manufacturing vertical complementary bipolar transistors each with epitaxial base zones
JPH05198584A (ja) バイポーラ集積回路
JPH0195552A (ja) モノリシック集積半導体装置の製造方法
JPS5917544B2 (ja) 半導体集積回路
JPH0424866B2 (enrdf_load_stackoverflow)
JPS6133261B2 (enrdf_load_stackoverflow)
JPH03190139A (ja) 半導体集積回路装置
JPS6348189B2 (enrdf_load_stackoverflow)
JP2760401B2 (ja) 誘電体分離基板及び半導体装置
JP2504529B2 (ja) バイポ―ラ形薄膜半導体装置
JPS62136850A (ja) 半導体装置及びその製造方法
JP3135615B2 (ja) 半導体装置及びその製造方法
JP3311037B2 (ja) 半導体装置
JPH03234054A (ja) 半導体装置の製造方法
JP2845469B2 (ja) 半導体装置
JPH0330305B2 (enrdf_load_stackoverflow)
JPS58212171A (ja) 半導体装置