JPS5848958A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5848958A JPS5848958A JP56142024A JP14202481A JPS5848958A JP S5848958 A JPS5848958 A JP S5848958A JP 56142024 A JP56142024 A JP 56142024A JP 14202481 A JP14202481 A JP 14202481A JP S5848958 A JPS5848958 A JP S5848958A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- semiconductor
- type
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000012535 impurity Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000010586 diagram Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 23
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 5
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 8
- 230000003321 amplification Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56142024A JPS5848958A (ja) | 1981-09-09 | 1981-09-09 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56142024A JPS5848958A (ja) | 1981-09-09 | 1981-09-09 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5848958A true JPS5848958A (ja) | 1983-03-23 |
| JPH0424866B2 JPH0424866B2 (enrdf_load_stackoverflow) | 1992-04-28 |
Family
ID=15305587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56142024A Granted JPS5848958A (ja) | 1981-09-09 | 1981-09-09 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848958A (enrdf_load_stackoverflow) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50141979A (enrdf_load_stackoverflow) * | 1974-05-01 | 1975-11-15 | ||
| JPS50142181A (enrdf_load_stackoverflow) * | 1974-05-07 | 1975-11-15 | ||
| JPS5298485A (en) * | 1976-02-13 | 1977-08-18 | Sony Corp | Semiconductor integrated circuit |
-
1981
- 1981-09-09 JP JP56142024A patent/JPS5848958A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50141979A (enrdf_load_stackoverflow) * | 1974-05-01 | 1975-11-15 | ||
| JPS50142181A (enrdf_load_stackoverflow) * | 1974-05-07 | 1975-11-15 | ||
| JPS5298485A (en) * | 1976-02-13 | 1977-08-18 | Sony Corp | Semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0424866B2 (enrdf_load_stackoverflow) | 1992-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6838348B2 (en) | Integrated process for high voltage and high performance silicon-on-insulator bipolar devices | |
| US5323055A (en) | Semiconductor device with buried conductor and interconnection layer | |
| US6724066B2 (en) | High breakdown voltage transistor and method | |
| US6326674B1 (en) | Integrated injection logic devices including injection regions and tub or sink regions | |
| KR100683099B1 (ko) | 반도체 집적 회로 장치 및 그 제조 방법 | |
| US5637909A (en) | Semiconductor device and method of manufacturing the same | |
| JP3083831B2 (ja) | 半導体装置及びその製造方法 | |
| JPS5848958A (ja) | 半導体装置の製造方法 | |
| JPH10335630A (ja) | 半導体装置及びその製造方法 | |
| JPS61245573A (ja) | 半導体装置 | |
| JPH03190139A (ja) | 半導体集積回路装置 | |
| JPH10233525A (ja) | アバランシェフォトダイオード | |
| JPS6022504B2 (ja) | 半導体装置の製造方法 | |
| JP2005026392A (ja) | 半導体装置および半導体装置の製造方法 | |
| JP3311037B2 (ja) | 半導体装置 | |
| JPS5984469A (ja) | 半導体装置の製造方法 | |
| JPH02159727A (ja) | バイポーラ形薄膜半導体装置 | |
| JP2665820B2 (ja) | ラテラルトランジスタ | |
| JPH05109745A (ja) | 半導体装置 | |
| JPS6348189B2 (enrdf_load_stackoverflow) | ||
| JPH0629374A (ja) | 半導体集積回路装置 | |
| JPS61150231A (ja) | 半導体装置 | |
| JPH08227941A (ja) | 複合半導体素子 | |
| JPH0574791A (ja) | 半導体装置 | |
| JPH05109748A (ja) | 半導体装置およびその製造方法 |