JPS5734357A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5734357A
JPS5734357A JP10952780A JP10952780A JPS5734357A JP S5734357 A JPS5734357 A JP S5734357A JP 10952780 A JP10952780 A JP 10952780A JP 10952780 A JP10952780 A JP 10952780A JP S5734357 A JPS5734357 A JP S5734357A
Authority
JP
Japan
Prior art keywords
region
power
regions
contact point
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10952780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348189B2 (enrdf_load_stackoverflow
Inventor
Masaru Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP10952780A priority Critical patent/JPS5734357A/ja
Publication of JPS5734357A publication Critical patent/JPS5734357A/ja
Publication of JPS6348189B2 publication Critical patent/JPS6348189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP10952780A 1980-08-09 1980-08-09 Semiconductor integrated circuit Granted JPS5734357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10952780A JPS5734357A (en) 1980-08-09 1980-08-09 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10952780A JPS5734357A (en) 1980-08-09 1980-08-09 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5734357A true JPS5734357A (en) 1982-02-24
JPS6348189B2 JPS6348189B2 (enrdf_load_stackoverflow) 1988-09-28

Family

ID=14512513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10952780A Granted JPS5734357A (en) 1980-08-09 1980-08-09 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5734357A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181161A (ja) * 1984-12-20 1986-08-13 エス・ジ−・エス・マイクロエレツトロニカ・エス・ピ−・エ− 半導体装置の製造方法
US5408124A (en) * 1991-11-26 1995-04-18 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141979A (enrdf_load_stackoverflow) * 1974-05-01 1975-11-15
JPS5570063A (en) * 1978-11-22 1980-05-27 Hitachi Ltd Transistor and its preparation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141979A (enrdf_load_stackoverflow) * 1974-05-01 1975-11-15
JPS5570063A (en) * 1978-11-22 1980-05-27 Hitachi Ltd Transistor and its preparation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181161A (ja) * 1984-12-20 1986-08-13 エス・ジ−・エス・マイクロエレツトロニカ・エス・ピ−・エ− 半導体装置の製造方法
US5408124A (en) * 1991-11-26 1995-04-18 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance

Also Published As

Publication number Publication date
JPS6348189B2 (enrdf_load_stackoverflow) 1988-09-28

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