JPS6372162A - 静電誘導型サイリスタ - Google Patents

静電誘導型サイリスタ

Info

Publication number
JPS6372162A
JPS6372162A JP62059756A JP5975687A JPS6372162A JP S6372162 A JPS6372162 A JP S6372162A JP 62059756 A JP62059756 A JP 62059756A JP 5975687 A JP5975687 A JP 5975687A JP S6372162 A JPS6372162 A JP S6372162A
Authority
JP
Japan
Prior art keywords
region
gate
type
potential
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62059756A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362911B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP62059756A priority Critical patent/JPS6372162A/ja
Publication of JPS6372162A publication Critical patent/JPS6372162A/ja
Publication of JPS6362911B2 publication Critical patent/JPS6362911B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Thyristors (AREA)
JP62059756A 1987-03-12 1987-03-12 静電誘導型サイリスタ Granted JPS6372162A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62059756A JPS6372162A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62059756A JPS6372162A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP760979A Division JPS5599772A (en) 1978-03-17 1979-01-24 Electrostatic induction type thyristor

Publications (2)

Publication Number Publication Date
JPS6372162A true JPS6372162A (ja) 1988-04-01
JPS6362911B2 JPS6362911B2 (enExample) 1988-12-05

Family

ID=13122420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62059756A Granted JPS6372162A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ

Country Status (1)

Country Link
JP (1) JPS6372162A (enExample)

Also Published As

Publication number Publication date
JPS6362911B2 (enExample) 1988-12-05

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