JP5520215B2 - 改良された電力用スイッチングトランジスター - Google Patents
改良された電力用スイッチングトランジスター Download PDFInfo
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- JP5520215B2 JP5520215B2 JP2010512201A JP2010512201A JP5520215B2 JP 5520215 B2 JP5520215 B2 JP 5520215B2 JP 2010512201 A JP2010512201 A JP 2010512201A JP 2010512201 A JP2010512201 A JP 2010512201A JP 5520215 B2 JP5520215 B2 JP 5520215B2
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- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
このJBSダイオードは、このチャンネルに対する整流コンタクトを構成し、かつ、第1と第2のVJFETの少なくとも1つのゲートに対する非整流コンタクトを構成する金属コンタクトを備え、この金属コンタクトが、このJBSダイオードのアノードである。第1の電気接続手段が、第1のVJFETのゲート、第2のVJFETのゲートとJBSダイオードのアノードとを共通ゲート電極に連結し、第2の電気接続手段が第1のVJFETのソースと第2のVJFETのソースを共通ソース電極に連結する。
110 N+型ソース領域
111 第2のゲート
112 ソース
113 第1のゲート
115 P+インプラント(P+ゲート領域)
120 P+インプラント(P+ゲート領域)
130 チャンネル130
140 N型ドリフト領域
160 ドレイン
200 集積VJFET/JBSD電力用デバイス
201 第1のVJFET
203 第2のVJFET
208 ソース
210 N+型ソース領域
211、213、266、267 ゲートコンタクト
212 ソース
213 第1のゲート
217 N+型ソース領域
220 P+インプラント
230 チャンネル
240 N型ドリフト領域
250 N+型バッファー/基板
260 ドレイン
265 P+インプラント
266 第2のゲート
Claims (12)
- ソースとソースの各々の側部に配置されたゲートとを備える第1の垂直接合電界効果トランジスターと、
ソースとソースの各々の側部に配置されたゲートとを備える第2の垂直接合電界効果トランジスターと、
第1及び第2の垂直接合電界効果トランジスターの間に配置された接合バリアーショトキーダイオードと、
を備え、
第1及び第2の垂直接合電界効果トランジスターのゲートは、それぞれP+型又はN+型のインプラントと、前記P+型又はN+型のインプラントに対してオーミックコンタクトとなる金属からなるゲートコンタクトとを含み、
第1の垂直接合電界効果トランジスターの少なくとも1つのゲートは、第2の垂直接合電界効果トランジスターの少なくとも1つのゲートから、チャンネルにより分離され、
前記接合バリアーショトキーダイオードは、前記チャンネルに対する整流コンタクトを構成し、かつ、第1及び第2の垂直接合電界効果トランジスターの少なくとも1つのゲートに対する非整流コンタクトを構成する金属コンタクトを備え、
前記金属コンタクトは、前記接合バリアーショトキーダイオードのアノードであり、かつ、第1及び第2の垂直接合電界効果トランジスターの少なくとも1つのゲートに含まれる前記ゲートコンタクトと接触し、
さらに、第1の垂直接合電界効果トランジスターのゲートと第2の垂直接合電界効果トランジスターのゲートと前記接合バリアーショトキーダイオードのアノードとを共通ゲート電極に連結する第1の電気接続部と
第1の垂直接合電界効果トランジスターのソースと第2の垂直接合電界効果トランジスターのソースとを共通ソース電極に連結する第2の電気接続部と
を備えることを特徴とする半導体集積デバイス。 - 第1及び第2の垂直接合電界効果トランジスターの少なくとも一方が、ノーマリーオフの垂直接合電界効果トランジスターである請求項1に記載のデバイス。
- 前記ソースと前記チャンネルがP型半導体材料から構成され、前記ゲートがN型半導体材料から構成される請求項1に記載のデバイス。
- 前記ソースと前記チャンネルがN型半導体材料から構成され、前記ゲートがP型半導体材料から構成される請求項1に記載のデバイス。
- 第1及び第2の垂直接合電界効果トランジスターのゲートが、前記チャンネルにインプラントされたイオン領域から構成される請求項1に記載のデバイス。
- 第1及び第2の垂直接合電界効果トランジスターのゲートが前記チャンネルに拡散されたイオン領域から構成される請求項1に記載のデバイス。
- 第1及び第2の垂直接合電界効果トランジスターのゲートが、エピタキシャル再成長により形成されたイオン領域で構成される請求項1に記載のデバイス。
- 前記チャンネルと前記ゲートとの両方が、ショトキーメタルに直接接触する請求項1に記載のデバイス。
- 第1及び第2の垂直接合電界効果トランジスターのゲートがプレーナー構造から構成される請求項1に記載のデバイス。
- 第1及び第2の垂直接合電界効果トランジスターのゲートが埋め込みゲート技術により形成される請求項1に記載のデバイス。
- 第1及び第2の垂直接合電界効果トランジスターのゲートが高バリアーのショトキーメタ
ルから構成され、前記デバイスが更にデュアルメタルショトキーダイオードで構成される請求項1に記載のデバイス。 - 集積垂直接合電界効果トランジスターを製造する方法であって、前記方法は、
N+、又は、P+型ソースコンタクト層を含むソース支柱の1対を基板にエッチングし、
エッチングされた前記ソース支柱の間の前記基板にマスクをパターン化し、
前記基板にP+又はN+型の領域をインプラントし、前記P+又はN+型の領域は、前記ソース支柱とパターン化された前記マスクの近傍に配置され、かつ、前記P+又はN+型の領域は、前記集積垂直接合電界効果トランジスターのための共通ゲートを構成し、
前記P+又はN+型の領域上にゲートコンタクトを形成し、
前記基板に対し整流コンタクトを構成しかつ前記ゲートコンタクトに対し非整流コンタクトを構成する金属コンタクトを形成し、
前記集積垂直接合電界効果トランジスターのための共通ソースを構成する前記ソース支柱を結合して、前記集積垂直接合電界効果トランジスターが1対の垂直接合電界効果トランジスターの間に構成された接合バリアーショトキーダイオードを与える、
方法により構成されることを特徴とする集積垂直接合電界効果トランジスターを製造する方法。
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US11/808,915 US7982239B2 (en) | 2007-06-13 | 2007-06-13 | Power switching transistors |
US11/808,915 | 2007-06-13 | ||
PCT/US2008/007408 WO2008156674A1 (en) | 2007-06-13 | 2008-06-13 | Improved power switching transistors |
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EP (1) | EP2165367B1 (ja) |
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WO (1) | WO2008156674A1 (ja) |
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US7982239B2 (en) | 2011-07-19 |
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