JPS5599772A - Electrostatic induction type thyristor - Google Patents

Electrostatic induction type thyristor

Info

Publication number
JPS5599772A
JPS5599772A JP760979A JP760979A JPS5599772A JP S5599772 A JPS5599772 A JP S5599772A JP 760979 A JP760979 A JP 760979A JP 760979 A JP760979 A JP 760979A JP S5599772 A JPS5599772 A JP S5599772A
Authority
JP
Japan
Prior art keywords
region
type
channel
impurity concentration
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP760979A
Other languages
Japanese (ja)
Other versions
JPS639386B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP760979A priority Critical patent/JPS5599772A/en
Priority to US06/018,774 priority patent/US4364072A/en
Priority to DE2910566A priority patent/DE2910566C2/en
Publication of JPS5599772A publication Critical patent/JPS5599772A/en
Priority to US06/386,313 priority patent/US4504847A/en
Publication of JPS639386B2 publication Critical patent/JPS639386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To widen the width of the effective channel and facilitate large current operation by providing an impurity gradient in the channel region. CONSTITUTION:n-Type region 18 having a higher impurity concentration than that of n<->-type channel region 13' is provided in the part surrounding a p<+>-type gate region. As a resut, n-type region 18 having a high impurity concetration produce a large potential difference by ionization, out channel region 13' having a low impurity concentration produces a small potential difference only even if it is ionized. Further, by providing region 18, it is possible to widen the width of the effective channel and increase the impurity concentration of region 18, so that it is possible to enlarge its potential. For this reason, the punch-through conditions between gate region 14 and anode region 11 are relaxed and the gate current decreases.
JP760979A 1978-03-17 1979-01-24 Electrostatic induction type thyristor Granted JPS5599772A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP760979A JPS5599772A (en) 1979-01-24 1979-01-24 Electrostatic induction type thyristor
US06/018,774 US4364072A (en) 1978-03-17 1979-03-08 Static induction type semiconductor device with multiple doped layers for potential modification
DE2910566A DE2910566C2 (en) 1978-03-17 1979-03-17 Static induction semiconductor device
US06/386,313 US4504847A (en) 1978-03-17 1982-06-08 Static induction type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP760979A JPS5599772A (en) 1979-01-24 1979-01-24 Electrostatic induction type thyristor

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP5975587A Division JPS6372161A (en) 1987-03-12 1987-03-12 Static induction type thyristor
JP5975687A Division JPS6372162A (en) 1987-03-12 1987-03-12 Static induction type thyristor

Publications (2)

Publication Number Publication Date
JPS5599772A true JPS5599772A (en) 1980-07-30
JPS639386B2 JPS639386B2 (en) 1988-02-29

Family

ID=11670541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP760979A Granted JPS5599772A (en) 1978-03-17 1979-01-24 Electrostatic induction type thyristor

Country Status (1)

Country Link
JP (1) JPS5599772A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JPS60226185A (en) * 1984-04-25 1985-11-11 Hitachi Ltd Semiconductor device
US4998149A (en) * 1987-04-14 1991-03-05 Kabushiki Kaisha Toyota Chuo Kenkyusho Static induction type semiconductor device
JPH04355966A (en) * 1991-01-09 1992-12-09 Toyo Electric Mfg Co Ltd Electrostatic induction type semiconductor element and manufacture thereof
WO2004084310A1 (en) * 2003-03-19 2004-09-30 Siced Electronics Development Gmbh & Co. Kg Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JPH0126187B2 (en) * 1980-11-21 1989-05-22 Handotai Kenkyu Shinkokai
JPS60226185A (en) * 1984-04-25 1985-11-11 Hitachi Ltd Semiconductor device
US4998149A (en) * 1987-04-14 1991-03-05 Kabushiki Kaisha Toyota Chuo Kenkyusho Static induction type semiconductor device
JPH04355966A (en) * 1991-01-09 1992-12-09 Toyo Electric Mfg Co Ltd Electrostatic induction type semiconductor element and manufacture thereof
WO2004084310A1 (en) * 2003-03-19 2004-09-30 Siced Electronics Development Gmbh & Co. Kg Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
US7615802B2 (en) 2003-03-19 2009-11-10 Siced Electronics Development Gmbh & Co. Kg Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

Also Published As

Publication number Publication date
JPS639386B2 (en) 1988-02-29

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