JPS6367342B2 - - Google Patents

Info

Publication number
JPS6367342B2
JPS6367342B2 JP58045311A JP4531183A JPS6367342B2 JP S6367342 B2 JPS6367342 B2 JP S6367342B2 JP 58045311 A JP58045311 A JP 58045311A JP 4531183 A JP4531183 A JP 4531183A JP S6367342 B2 JPS6367342 B2 JP S6367342B2
Authority
JP
Japan
Prior art keywords
normally
forming
semiconductor layer
type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58045311A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59172272A (ja
Inventor
Masahiro Akyama
Seiji Nishi
Yasushi Kawakami
Toshimasa Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58045311A priority Critical patent/JPS59172272A/ja
Publication of JPS59172272A publication Critical patent/JPS59172272A/ja
Publication of JPS6367342B2 publication Critical patent/JPS6367342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58045311A 1983-03-19 1983-03-19 半導体装置の製造方法 Granted JPS59172272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58045311A JPS59172272A (ja) 1983-03-19 1983-03-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58045311A JPS59172272A (ja) 1983-03-19 1983-03-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59172272A JPS59172272A (ja) 1984-09-28
JPS6367342B2 true JPS6367342B2 (enrdf_load_stackoverflow) 1988-12-26

Family

ID=12715760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58045311A Granted JPS59172272A (ja) 1983-03-19 1983-03-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59172272A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200149A (ja) * 2008-02-20 2009-09-03 Sanken Electric Co Ltd 半導体スイッチング装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2655594B2 (ja) * 1984-01-10 1997-09-24 日本電気株式会社 集積型半導体装置
JP4507285B2 (ja) * 1998-09-18 2010-07-21 ソニー株式会社 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200149A (ja) * 2008-02-20 2009-09-03 Sanken Electric Co Ltd 半導体スイッチング装置

Also Published As

Publication number Publication date
JPS59172272A (ja) 1984-09-28

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