JPS59172272A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59172272A
JPS59172272A JP58045311A JP4531183A JPS59172272A JP S59172272 A JPS59172272 A JP S59172272A JP 58045311 A JP58045311 A JP 58045311A JP 4531183 A JP4531183 A JP 4531183A JP S59172272 A JPS59172272 A JP S59172272A
Authority
JP
Japan
Prior art keywords
type
normally
layer
gate
electron gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58045311A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6367342B2 (enrdf_load_stackoverflow
Inventor
Masahiro Akiyama
秋山　正博
Seiji Nishi
清次 西
Yasushi Kawakami
康 川上
Toshimasa Ishida
俊正 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58045311A priority Critical patent/JPS59172272A/ja
Publication of JPS59172272A publication Critical patent/JPS59172272A/ja
Publication of JPS6367342B2 publication Critical patent/JPS6367342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58045311A 1983-03-19 1983-03-19 半導体装置の製造方法 Granted JPS59172272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58045311A JPS59172272A (ja) 1983-03-19 1983-03-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58045311A JPS59172272A (ja) 1983-03-19 1983-03-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59172272A true JPS59172272A (ja) 1984-09-28
JPS6367342B2 JPS6367342B2 (enrdf_load_stackoverflow) 1988-12-26

Family

ID=12715760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58045311A Granted JPS59172272A (ja) 1983-03-19 1983-03-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59172272A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145671A (ja) * 1984-01-10 1985-08-01 Nec Corp 集積型半導体装置
JP2000100828A (ja) * 1998-09-18 2000-04-07 Sony Corp 半導体装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5439725B2 (ja) * 2008-02-20 2014-03-12 サンケン電気株式会社 半導体スイッチング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145671A (ja) * 1984-01-10 1985-08-01 Nec Corp 集積型半導体装置
JP2000100828A (ja) * 1998-09-18 2000-04-07 Sony Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6367342B2 (enrdf_load_stackoverflow) 1988-12-26

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