JPS6364895B2 - - Google Patents

Info

Publication number
JPS6364895B2
JPS6364895B2 JP57013005A JP1300582A JPS6364895B2 JP S6364895 B2 JPS6364895 B2 JP S6364895B2 JP 57013005 A JP57013005 A JP 57013005A JP 1300582 A JP1300582 A JP 1300582A JP S6364895 B2 JPS6364895 B2 JP S6364895B2
Authority
JP
Japan
Prior art keywords
film
tantalum oxide
tantalum
oxide film
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57013005A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58131735A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57013005A priority Critical patent/JPS58131735A/ja
Publication of JPS58131735A publication Critical patent/JPS58131735A/ja
Publication of JPS6364895B2 publication Critical patent/JPS6364895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6314—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP57013005A 1982-01-29 1982-01-29 タンタルオキサイド膜の製造法 Granted JPS58131735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57013005A JPS58131735A (ja) 1982-01-29 1982-01-29 タンタルオキサイド膜の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57013005A JPS58131735A (ja) 1982-01-29 1982-01-29 タンタルオキサイド膜の製造法

Publications (2)

Publication Number Publication Date
JPS58131735A JPS58131735A (ja) 1983-08-05
JPS6364895B2 true JPS6364895B2 (OSRAM) 1988-12-14

Family

ID=11821057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57013005A Granted JPS58131735A (ja) 1982-01-29 1982-01-29 タンタルオキサイド膜の製造法

Country Status (1)

Country Link
JP (1) JPS58131735A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0246756A (ja) * 1988-08-08 1990-02-16 Mitsubishi Electric Corp 半導体容量素子の製造方法
JP2786071B2 (ja) * 1993-02-17 1998-08-13 日本電気株式会社 半導体装置の製造方法
KR20020058427A (ko) * 2000-12-30 2002-07-12 박종섭 커패시터의 제조방법

Also Published As

Publication number Publication date
JPS58131735A (ja) 1983-08-05

Similar Documents

Publication Publication Date Title
Lin et al. Ta~ 2O~ 5 thin films with exceptionally high dielectric constant
JP3202893B2 (ja) 低温オゾン・プラズマ・アニールによる酸化タンタル薄膜製造方法
US4959745A (en) Capacitor and method for producing the same
US5780115A (en) Methods for fabricating electrode structures including oxygen and nitrogen plasma treatments
JPH09121035A (ja) 半導体素子のキャパシタ製造方法
US5432732A (en) Dynamic semiconductor memory
US5569619A (en) Method for forming a capacitor of a semiconductor memory cell
KR920007106A (ko) 고체전자소자 및 그의 제조방법
US5444011A (en) Method for forming a thin film capacitive memory deivce with a high dielectric constant
US4406053A (en) Process for manufacturing a semiconductor device having a non-porous passivation layer
JPS6364895B2 (OSRAM)
KR100588888B1 (ko) 절연막으로서 산화 탄탈막을 갖는 커패시터의 제조방법
JPH0864763A (ja) キャパシタ及びその製造方法
JPH01154547A (ja) 容量の製造方法
JPH0367346B2 (OSRAM)
JP3179779B2 (ja) 窒化物絶縁膜の作製方法
JPS60107838A (ja) 半導体装置の製造方法
JPH03212976A (ja) 透明導電酸化膜を含むｃｉｓ構造の処理方法
KR100312996B1 (ko) 반도체장치의절연막제조방법
JP3337506B2 (ja) 電解コンデンサ電極用アルミニウム材料の製造方法
JPS58112360A (ja) 半導体装置用キヤパシタおよびその製造方法
JPH02113527A (ja) 無機誘電薄層の形成方法
JP3136764B2 (ja) カルコパイライト薄膜の製造方法
JPH05343254A (ja) 容量装置およびその製造方法
JPH04196435A (ja) 半導体装置の製造方法