JPS6364895B2 - - Google Patents
Info
- Publication number
- JPS6364895B2 JPS6364895B2 JP57013005A JP1300582A JPS6364895B2 JP S6364895 B2 JPS6364895 B2 JP S6364895B2 JP 57013005 A JP57013005 A JP 57013005A JP 1300582 A JP1300582 A JP 1300582A JP S6364895 B2 JPS6364895 B2 JP S6364895B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- tantalum oxide
- tantalum
- oxide film
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 16
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 16
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- -1 nitrogen ion Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明はコンデンサの誘電皮膜などに利用され
るタンタルオキサイド皮膜の製造法に関するもの
で、特に緻密なタンタルオキサイド皮膜の製造法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for manufacturing a tantalum oxide film used as a dielectric film of a capacitor, and particularly to a method for manufacturing a dense tantalum oxide film.
(b) 技術の背景
タンタルオキサイド（TaOx）は勝れた誘電性
を有し、コンデンサの誘電体膜として利用され
る。その比誘電率は約11.5であり、二酸化珪素の
それの二倍以上であることから、高密度１トラン
ジスタ型ダイナミツクRAMのキヤパシタに利用
することが考えられている。(b) Background of the Technology Tantalum oxide (TaO x ) has excellent dielectric properties and is used as a dielectric film in capacitors. Its dielectric constant is approximately 11.5, which is more than twice that of silicon dioxide, so it is being considered for use in capacitors for high-density one-transistor dynamic RAM.
(c) 従来技術と問題点
しかしながら、通常の方法で形成したタンタル
オキサイド皮膜は多孔質的なものとなるため、リ
ークが多く、耐圧も低いものであり、該皮膜を密
に形成することは困難であつた。特にICの構成
素子として、キヤパシタをシリコン（Si）基板上
或いは多結晶Si層上に形成するような場合、タン
タルオキサイド皮膜を十分に密に形成することは
殆ど不可能であつた。(c) Conventional technology and problems However, since the tantalum oxide film formed by the usual method is porous, there are many leaks and the withstand voltage is low, making it difficult to form the film densely. It was hot. Particularly when forming a capacitor as a component of an IC on a silicon (Si) substrate or a polycrystalline Si layer, it has been almost impossible to form a sufficiently dense tantalum oxide film.
(d) 発明の目的
本発明はICの製造工程の一環として、他の素
子の形成に何等の影響を及ぼすことなく、シリコ
ン基板上或いは多結晶Si層上に、タンタルオキサ
イド皮膜を密に形成する技術を提供することであ
る。(d) Purpose of the Invention The present invention forms a tantalum oxide film densely on a silicon substrate or polycrystalline Si layer as part of the IC manufacturing process without affecting the formation of other elements in any way. The goal is to provide technology.
(e) 発明の構成
本発明のタンタルオキサイド皮膜製造法は、基
板物体表面に被着したタンタル皮膜にイオンビー
ムを照射した後、該タンタル皮膜への電子線、レ
ーザ光等のエネルギー線照射と、該タンタル皮膜
の酸化とを行うことを特徴とする。(e) Structure of the Invention The method for producing a tantalum oxide film of the present invention includes irradiating a tantalum film deposited on the surface of a substrate object with an ion beam, and then irradiating the tantalum film with an energy beam such as an electron beam or a laser beam. The tantalum film is oxidized.
(f) 発明の実施例 第１図〜第５図に本発明の一実施例を示す。(f) Examples of the invention An embodiment of the present invention is shown in FIGS. 1 to 5.
第１図に示すようにSi基板１の表面にタンタル
（Ta）膜２を50nmの厚さに被着する。これは真
空蒸着、スパツタリング、CVD法のいずれによ
つてもよい。また、本例では１はSi基板である
が、多結晶Si層或いはその他の材料であつても、
以下の工程を同様に実施することができる。 As shown in FIG. 1, a tantalum (Ta) film 2 with a thickness of 50 nm is deposited on the surface of a Si substrate 1. This may be done by vacuum deposition, sputtering, or CVD. In addition, in this example, 1 is a Si substrate, but even if it is a polycrystalline Si layer or other material,
The following steps can be performed similarly.
このTa膜２に窒素イオン（Ｎ＋）ビームを照
射し、該皮膜をアモルフアス化する（第２図）。
照射された窒素イオンがSi基板にまで達すること
は好ましくないので、その大部分はTa膜中に留
まるよう加速エネルギーが定められる。また、ド
ーズ量は、例えば１×1016／cm2である。 This Ta film 2 is irradiated with a nitrogen ion (N+) beam to make the film amorphous (FIG. 2).
Since it is not desirable for the irradiated nitrogen ions to reach the Si substrate, the acceleration energy is determined so that most of them remain in the Ta film. Further, the dose amount is, for example, 1×10 16 /cm 2 .
使用するイオンビームの種類は窒素イオンに限
定されるものではないが、アモルフアス化を効果
的に行い、しかも電気的特性に無用の影響を及ぼ
すことが無いという条件から窒素イオンが最適で
ある。タンタルオキサイド中の窒素には其のリー
ク特性を軽減する作用もある。 Although the type of ion beam to be used is not limited to nitrogen ions, nitrogen ions are most suitable because they effectively form amorphous materials and do not unnecessarily affect electrical characteristics. Nitrogen in tantalum oxide also has the effect of reducing its leakage characteristics.
このイオンビーム照射によつてTa膜はアモル
フアス化されると共に、より高密化される。これ
らの効果を目的としてイオンビームを照射するこ
とは通常行われることである。 This ion beam irradiation makes the Ta film amorphous and makes it more dense. Irradiation with an ion beam is commonly performed for the purpose of achieving these effects.
イオンビーム照射を受けたTa膜は、続いて第
３図に示すようにレーザ光照射によつてアニール
される。該レーザ光照射に使用するレーザ３はア
ルゴンレーザが適当であり、例えば18Wの出力の
アルゴンレーザを、10cm／secの速度で、走査し
て照射する。 The Ta film that has been irradiated with the ion beam is then annealed by laser light irradiation as shown in FIG. The laser 3 used for the laser beam irradiation is suitably an argon laser, and for example, the argon laser with an output of 18 W is scanned and irradiated at a speed of 10 cm/sec.
このアニールの目的はイオンビーム照射によつ
て生じた応力の解消であるが、レーザアニールに
よれば、単なる加熱処理によつては得られない効
果、阻ち、皮膜の緻密化という効果が得られる。
これはレーザ光照射によつて皮膜中のボイドやピ
ンホールなどが潰される為である。 The purpose of this annealing is to eliminate stress caused by ion beam irradiation, but laser annealing can provide effects that cannot be obtained with simple heat treatment, such as blocking and densification of the film. .
This is because voids and pinholes in the film are crushed by the laser beam irradiation.
以上の処理を受けたTa膜が続く工程で酸化さ
れるわけであるが、タンタルはアルミニウムと同
じように、表面にオキサイド膜ができると、酸化
が進み難くなるので、第４図のように、陽極酸化
によつて酸化される。高圧酸化によつても目的を
達することができる。４は形成されたタンタルオ
キサイド膜である。 The Ta film that has undergone the above treatment is oxidized in the subsequent process, but like aluminum, when an oxide film forms on the surface of tantalum, oxidation becomes difficult to proceed, so as shown in Figure 4, Oxidized by anodic oxidation. The objective can also be achieved by high pressure oxidation. 4 is the formed tantalum oxide film.
このようにして形成されたタンタルオキサイド
皮膜は極めて緻密であり、第５図に示すように電
極５を設けてキヤパシタを構成した場合のリーク
特性は、従来のものに比べて１桁乃至２桁向上し
た。 The tantalum oxide film formed in this way is extremely dense, and when the electrode 5 is provided to form a capacitor as shown in Figure 5, the leakage characteristics are improved by one to two orders of magnitude compared to the conventional one. did.
上記工程中、レーザアニール工程と陽極酸化工
程の順序を入換え、レーザアニール工程を陽極酸
化工程の後で実施しても、同様の効果が得られる
が、タンタルオキサイド皮膜のレーザ光の吸収率
の波長依存性を考慮し、最も効率のよい波長の光
を選ぶ必要がある。 In the above steps, the same effect can be obtained even if the order of the laser annealing step and the anodizing step is changed and the laser annealing step is performed after the anodizing step, but the laser light absorption rate of the tantalum oxide film is It is necessary to consider wavelength dependence and select the most efficient wavelength of light.
(g) 発明の効果
本発明によれば、低リーク、高耐圧のタンタル
オキサイド皮膜が得られるので、ダイナミツク
RAMのキヤパシタを小面積で形成することが可
能となつた。また、既述したように、多結晶Si上
にもタンタルオキサイド皮膜の形成が可能なの
で、キヤパシタ部分を立体的に構成することも出
来る。(g) Effects of the Invention According to the present invention, a tantalum oxide film with low leakage and high voltage resistance can be obtained, so dynamic
It has become possible to form a RAM capacitor in a small area. Furthermore, as described above, since it is possible to form a tantalum oxide film on polycrystalline Si, the capacitor portion can also be structured three-dimensionally.
第１図乃至第５図は本発明の一実施例を示す図
であつて、図に於て１はSi基板、２はTa膜、３
はアルゴンレーザ、４はタンタルオキサイド皮
膜、５はキヤパシタの一方の電極である。
1 to 5 are diagrams showing an embodiment of the present invention, in which 1 is a Si substrate, 2 is a Ta film, and 3 is a diagram showing an embodiment of the present invention.
is an argon laser, 4 is a tantalum oxide film, and 5 is one electrode of a capacitor.
Claims (1)
ンビームを照射した後、該タンタル皮膜へのエネ
ルギー線照射と、該タンタル皮膜の酸化とを行う
ことを特徴とするタンタルオキサイド膜の製造
法。 ２ 前記イオンビーム照射が窒素イオンビームの
照射であることを特徴とする特許請求の範囲第１
項記載のタンタルオキサイド膜の製造法。[Claims] 1. A tantalum oxide film, characterized in that after irradiating a tantalum film deposited on the surface of a substrate object with an ion beam, the tantalum film is irradiated with energy rays and the tantalum film is oxidized. manufacturing method. 2. Claim 1, wherein the ion beam irradiation is nitrogen ion beam irradiation.
A method for producing a tantalum oxide film as described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57013005A JPS58131735A (en) | 1982-01-29 | 1982-01-29 | Manufacture of tantalum oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57013005A JPS58131735A (en) | 1982-01-29 | 1982-01-29 | Manufacture of tantalum oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58131735A JPS58131735A (en) | 1983-08-05 |
| JPS6364895B2 true JPS6364895B2 (en) | 1988-12-14 |
Family
ID=11821057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57013005A Granted JPS58131735A (en) | 1982-01-29 | 1982-01-29 | Manufacture of tantalum oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58131735A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246756A (en) * | 1988-08-08 | 1990-02-16 | Mitsubishi Electric Corp | Manufacture of semiconductor capacitor |
| JP2786071B2 (en) * | 1993-02-17 | 1998-08-13 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| KR20020058427A (en) * | 2000-12-30 | 2002-07-12 | 박종섭 | Method for fabricating capacitor |
-
1982
- 1982-01-29 JP JP57013005A patent/JPS58131735A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58131735A (en) | 1983-08-05 |
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