JPS6362904B2 - - Google Patents

Info

Publication number
JPS6362904B2
JPS6362904B2 JP56047382A JP4738281A JPS6362904B2 JP S6362904 B2 JPS6362904 B2 JP S6362904B2 JP 56047382 A JP56047382 A JP 56047382A JP 4738281 A JP4738281 A JP 4738281A JP S6362904 B2 JPS6362904 B2 JP S6362904B2
Authority
JP
Japan
Prior art keywords
type
conductivity type
region
semiconductor substrate
concentration impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56047382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57162360A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56047382A priority Critical patent/JPS57162360A/ja
Publication of JPS57162360A publication Critical patent/JPS57162360A/ja
Publication of JPS6362904B2 publication Critical patent/JPS6362904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56047382A 1981-03-31 1981-03-31 Complementary insulated gate field effect semiconductor device Granted JPS57162360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047382A JPS57162360A (en) 1981-03-31 1981-03-31 Complementary insulated gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047382A JPS57162360A (en) 1981-03-31 1981-03-31 Complementary insulated gate field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS57162360A JPS57162360A (en) 1982-10-06
JPS6362904B2 true JPS6362904B2 (enEXAMPLES) 1988-12-05

Family

ID=12773544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047382A Granted JPS57162360A (en) 1981-03-31 1981-03-31 Complementary insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162360A (enEXAMPLES)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6368105U (enEXAMPLES) * 1986-10-24 1988-05-09

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714060B2 (ja) * 1983-12-14 1995-02-15 株式会社日立製作所 半導体装置の製造方法
US5136355A (en) * 1987-11-25 1992-08-04 Marconi Electronic Devices Limited Interconnecting layer on a semiconductor substrate
US4947228A (en) * 1988-09-20 1990-08-07 At&T Bell Laboratories Integrated circuit power supply contact
JP2602974B2 (ja) * 1990-02-27 1997-04-23 株式会社東芝 Ｃｍｏｓ半導体集積回路装置
JP2008147374A (ja) * 2006-12-08 2008-06-26 Fujitsu Ltd 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050066B2 (ja) * 1978-03-27 1985-11-06 超エル・エス・アイ技術研究組合 Ｍｏｓ半導体集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6368105U (enEXAMPLES) * 1986-10-24 1988-05-09

Also Published As

Publication number Publication date
JPS57162360A (en) 1982-10-06

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