JPS6362113B2 - - Google Patents

Info

Publication number
JPS6362113B2
JPS6362113B2 JP55134080A JP13408080A JPS6362113B2 JP S6362113 B2 JPS6362113 B2 JP S6362113B2 JP 55134080 A JP55134080 A JP 55134080A JP 13408080 A JP13408080 A JP 13408080A JP S6362113 B2 JPS6362113 B2 JP S6362113B2
Authority
JP
Japan
Prior art keywords
gate electrode
floating gate
region
insulating layer
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55134080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5759387A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP55134080A priority Critical patent/JPS5759387A/ja
Priority to DE3136517A priority patent/DE3136517C2/de
Priority to US06/302,776 priority patent/US4453234A/en
Publication of JPS5759387A publication Critical patent/JPS5759387A/ja
Publication of JPS6362113B2 publication Critical patent/JPS6362113B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP55134080A 1980-09-26 1980-09-26 Semiconductor storage device Granted JPS5759387A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55134080A JPS5759387A (en) 1980-09-26 1980-09-26 Semiconductor storage device
DE3136517A DE3136517C2 (de) 1980-09-26 1981-09-15 Nichtflüchtige Halbleiter-Speichervorrichtung
US06/302,776 US4453234A (en) 1980-09-26 1981-09-16 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134080A JPS5759387A (en) 1980-09-26 1980-09-26 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5759387A JPS5759387A (en) 1982-04-09
JPS6362113B2 true JPS6362113B2 (enrdf_load_stackoverflow) 1988-12-01

Family

ID=15119925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134080A Granted JPS5759387A (en) 1980-09-26 1980-09-26 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5759387A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS58203697A (ja) * 1982-05-20 1983-11-28 Toshiba Corp 半導体記憶装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040991A (enrdf_load_stackoverflow) * 1973-07-10 1975-04-15
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device
JPS5939910B2 (ja) * 1975-12-24 1984-09-27 セイコーエプソン株式会社 フキハツセイキオクソシ
JPS52104078A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Semiconductor unit
DE2844878A1 (de) * 1978-10-14 1980-04-30 Itt Ind Gmbh Deutsche Integrierbarer isolierschicht-feldeffekttransistor
DE2908796C3 (de) * 1979-03-07 1982-04-01 Siemens AG, 1000 Berlin und 8000 München Umprogrammierbarer Halbleiter-Festwertspeicher vom Floating-Gate-Typ

Also Published As

Publication number Publication date
JPS5759387A (en) 1982-04-09

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