JPS5759387A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5759387A
JPS5759387A JP55134080A JP13408080A JPS5759387A JP S5759387 A JPS5759387 A JP S5759387A JP 55134080 A JP55134080 A JP 55134080A JP 13408080 A JP13408080 A JP 13408080A JP S5759387 A JPS5759387 A JP S5759387A
Authority
JP
Japan
Prior art keywords
charges
semiconductor region
floating gate
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55134080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362113B2 (enrdf_load_stackoverflow
Inventor
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55134080A priority Critical patent/JPS5759387A/ja
Priority to DE3136517A priority patent/DE3136517C2/de
Priority to US06/302,776 priority patent/US4453234A/en
Publication of JPS5759387A publication Critical patent/JPS5759387A/ja
Publication of JPS6362113B2 publication Critical patent/JPS6362113B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP55134080A 1980-09-26 1980-09-26 Semiconductor storage device Granted JPS5759387A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55134080A JPS5759387A (en) 1980-09-26 1980-09-26 Semiconductor storage device
DE3136517A DE3136517C2 (de) 1980-09-26 1981-09-15 Nichtflüchtige Halbleiter-Speichervorrichtung
US06/302,776 US4453234A (en) 1980-09-26 1981-09-16 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134080A JPS5759387A (en) 1980-09-26 1980-09-26 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5759387A true JPS5759387A (en) 1982-04-09
JPS6362113B2 JPS6362113B2 (enrdf_load_stackoverflow) 1988-12-01

Family

ID=15119925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134080A Granted JPS5759387A (en) 1980-09-26 1980-09-26 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5759387A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS58203697A (ja) * 1982-05-20 1983-11-28 Toshiba Corp 半導体記憶装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040991A (enrdf_load_stackoverflow) * 1973-07-10 1975-04-15
JPS5197345A (enrdf_load_stackoverflow) * 1975-01-17 1976-08-26
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device
JPS5277681A (en) * 1975-12-24 1977-06-30 Seiko Epson Corp Nonvolatile memory device
JPS52104078A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Semiconductor unit
JPS5553463A (en) * 1978-10-14 1980-04-18 Itt Insulated gate field effect transistor
JPS55143074A (en) * 1979-03-07 1980-11-08 Siemens Ag Rewritable readdonly memory

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040991A (enrdf_load_stackoverflow) * 1973-07-10 1975-04-15
JPS5197345A (enrdf_load_stackoverflow) * 1975-01-17 1976-08-26
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device
JPS5277681A (en) * 1975-12-24 1977-06-30 Seiko Epson Corp Nonvolatile memory device
JPS52104078A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Semiconductor unit
JPS5553463A (en) * 1978-10-14 1980-04-18 Itt Insulated gate field effect transistor
JPS55143074A (en) * 1979-03-07 1980-11-08 Siemens Ag Rewritable readdonly memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS58203697A (ja) * 1982-05-20 1983-11-28 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPS6362113B2 (enrdf_load_stackoverflow) 1988-12-01

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