JPS5245285A - Manufacturing method of field effect transistor of silicon gate type - Google Patents

Manufacturing method of field effect transistor of silicon gate type

Info

Publication number
JPS5245285A
JPS5245285A JP8499676A JP8499676A JPS5245285A JP S5245285 A JPS5245285 A JP S5245285A JP 8499676 A JP8499676 A JP 8499676A JP 8499676 A JP8499676 A JP 8499676A JP S5245285 A JPS5245285 A JP S5245285A
Authority
JP
Japan
Prior art keywords
manufacturing
field effect
effect transistor
gate type
silicon gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8499676A
Other languages
Japanese (ja)
Other versions
JPS5227516B2 (en
Inventor
Norio Kobayashi
Taketoshi Kato
Teruo Yoneyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8499676A priority Critical patent/JPS5245285A/en
Publication of JPS5245285A publication Critical patent/JPS5245285A/en
Publication of JPS5227516B2 publication Critical patent/JPS5227516B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To get good IGFET for use in the high frequency region by decreasing the floating capacity among the gate electrode and the drain region.
COPYRIGHT: (C)1977,JPO&Japio
JP8499676A 1976-07-19 1976-07-19 Manufacturing method of field effect transistor of silicon gate type Granted JPS5245285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8499676A JPS5245285A (en) 1976-07-19 1976-07-19 Manufacturing method of field effect transistor of silicon gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8499676A JPS5245285A (en) 1976-07-19 1976-07-19 Manufacturing method of field effect transistor of silicon gate type

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2667171A Division JPS5147311B1 (en) 1971-04-26 1971-04-26

Publications (2)

Publication Number Publication Date
JPS5245285A true JPS5245285A (en) 1977-04-09
JPS5227516B2 JPS5227516B2 (en) 1977-07-20

Family

ID=13846231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8499676A Granted JPS5245285A (en) 1976-07-19 1976-07-19 Manufacturing method of field effect transistor of silicon gate type

Country Status (1)

Country Link
JP (1) JPS5245285A (en)

Also Published As

Publication number Publication date
JPS5227516B2 (en) 1977-07-20

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