JPS6360899B2 - - Google Patents

Info

Publication number
JPS6360899B2
JPS6360899B2 JP56087567A JP8756781A JPS6360899B2 JP S6360899 B2 JPS6360899 B2 JP S6360899B2 JP 56087567 A JP56087567 A JP 56087567A JP 8756781 A JP8756781 A JP 8756781A JP S6360899 B2 JPS6360899 B2 JP S6360899B2
Authority
JP
Japan
Prior art keywords
group
resist
plasma
biphenyl
acetoxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56087567A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57202533A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56087567A priority Critical patent/JPS57202533A/ja
Publication of JPS57202533A publication Critical patent/JPS57202533A/ja
Publication of JPS6360899B2 publication Critical patent/JPS6360899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56087567A 1981-06-09 1981-06-09 Formation of pattern Granted JPS57202533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56087567A JPS57202533A (en) 1981-06-09 1981-06-09 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56087567A JPS57202533A (en) 1981-06-09 1981-06-09 Formation of pattern

Publications (2)

Publication Number Publication Date
JPS57202533A JPS57202533A (en) 1982-12-11
JPS6360899B2 true JPS6360899B2 (Sortimente) 1988-11-25

Family

ID=13918562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56087567A Granted JPS57202533A (en) 1981-06-09 1981-06-09 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS57202533A (Sortimente)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPS5891632A (ja) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
JPH0727221B2 (ja) * 1985-07-24 1995-03-29 日本電信電話株式会社 パタン形成方法
JPH07107605B2 (ja) * 1985-07-26 1995-11-15 日本電信電話株式会社 パタ−ン形成法
JP2598923B2 (ja) * 1987-10-16 1997-04-09 正隆 村原 レジスト材料の現像方法
JP2506133B2 (ja) * 1987-11-18 1996-06-12 日本電信電話株式会社 パタ―ン形成方法
US4999280A (en) * 1989-03-17 1991-03-12 International Business Machines Corporation Spray silylation of photoresist images
JP2504832B2 (ja) * 1989-06-16 1996-06-05 シャープ株式会社 レジストパタ―ンの形成方法
US12416863B2 (en) * 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist

Also Published As

Publication number Publication date
JPS57202533A (en) 1982-12-11

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