JPS6359258B2 - - Google Patents
Info
- Publication number
- JPS6359258B2 JPS6359258B2 JP54126574A JP12657479A JPS6359258B2 JP S6359258 B2 JPS6359258 B2 JP S6359258B2 JP 54126574 A JP54126574 A JP 54126574A JP 12657479 A JP12657479 A JP 12657479A JP S6359258 B2 JPS6359258 B2 JP S6359258B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- semiconductor
- type region
- opposite conductivity
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 description 32
- 230000015556 catabolic process Effects 0.000 description 13
- 239000010410 layer Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000005669 field effect Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- -1 boron ions Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12657479A JPS5650527A (en) | 1979-09-29 | 1979-09-29 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12657479A JPS5650527A (en) | 1979-09-29 | 1979-09-29 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5650527A JPS5650527A (en) | 1981-05-07 |
| JPS6359258B2 true JPS6359258B2 (ko) | 1988-11-18 |
Family
ID=14938527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12657479A Granted JPS5650527A (en) | 1979-09-29 | 1979-09-29 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650527A (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
| US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
| JPS61195721A (ja) * | 1985-02-26 | 1986-08-30 | Nisshinbo Ind Inc | Ｎｃシ−ト材加工機 |
| US5371395A (en) * | 1992-05-06 | 1994-12-06 | Xerox Corporation | High voltage input pad protection circuitry |
| US5545910A (en) * | 1994-04-13 | 1996-08-13 | Winbond Electronics Corp. | ESD proctection device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS511394A (ko) * | 1974-03-19 | 1976-01-08 | Norsk Hydro As | |
| JPS5324157A (en) * | 1976-08-18 | 1978-03-06 | Sanyo Electric Co Ltd | Control circuit of air conditioner |
| JPS5365081A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Field effect semiconductor device |
-
1979
- 1979-09-29 JP JP12657479A patent/JPS5650527A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS511394A (ko) * | 1974-03-19 | 1976-01-08 | Norsk Hydro As | |
| JPS5324157A (en) * | 1976-08-18 | 1978-03-06 | Sanyo Electric Co Ltd | Control circuit of air conditioner |
| JPS5365081A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Field effect semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5650527A (en) | 1981-05-07 |
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